Silicon Germanium

Chemical Formula:

SiGe

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Tystar LPCVD Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Tystar LPCVD Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Tystar LPCVD Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 5 B2T5 Clean Oxide Anneal	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Tystar Atmospheric Tube Training	Clean	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 1 B1T1 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide Anneal	Tystar Atmospheric Tube Training	Flexible	SNF Cleanroom Paul G Allen L107
Profilometer AlphaStep D-300 alphastep2	AlphaStep2 Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
SEM -Zeiss Merlin sem-merlin	SEM-Merlin Training	All	SNF Exfab Paul G Allen 104 Stinson
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Wet Bench Clean 1 wbclean-1	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Lesker2 Sputter lesker2-sputter	Sputter Lesker 1&2 Training	Semiclean	SNF Cleanroom Paul G Allen L107	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Lesker Sputter lesker-sputter	Sputter Lesker 1&2 Training	Flexible	SNF Exfab Paul G Allen 155A Venice	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Cleanroom Paul G Allen L107

Pages

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Si Ti										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
ASML PAS 5500/60 i-line Stepper asml	Photolithography > Exposure > Stepper	All			365 nm	5 inch								4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)
Critical Point Dryer Tousimis Automegasamdri-915B cpd	Drying > CO2 Drying Wet Chemical Processing	Flexible								CO₂				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)	All						Resists						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
EVG Contact Aligner evalign	Photolithography > Exposure > Contact Aligner	All			350 - 450 nm	5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	one piece or wafer
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Semiclean	1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia					24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia					24 °C - 350 °C		Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania					24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂			Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
Finetech Lambda flipchipbonder	Bonding	Flexible							°C - 400 °C					Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge)	1
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	All												3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	All						AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	All			405 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	All			375 nm									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	All							150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean	0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	All			365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	All			365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	All												Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement	All	100.00 μm - 1000.00 μm						-258 °C - 1000 °C			8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece