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4 inch wafer

Short Name: 
4"

The following is a list of equipment where 4 inch round substrates are allowed.

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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort descending Notes
Nanospec 3
nanospec3
Nanospec 3 Training All SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 6
B2T6 Clean Oxide
Tystar Atmospheric Tube Training Clean SNF Cleanroom Paul G Allen L107
Wet Bench Flexible Solvents 1
wbflexsolv-1
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning, two ultrasonic baths.

Lam Research TCP 9400 Poly Etcher
lampoly
Lam Research TCP 9400 Poly Etcher Training Clean, Semiclean SNF Cleanroom Paul G Allen L107

Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.

RTA AllWin 610
aw610_r
AllWin 610 RTA Training Flexible SNF Cleanroom Paul G Allen L107
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Tystar Atmospheric Tube Training Clean SNF Cleanroom Paul G Allen L107
Headway Manual Resist Spinner
headway2
Resist Coat (manual) Headway Manual Training All SNF Cleanroom Paul G Allen L107

Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists

Wet Bench Flexible Solvents 2
wbflexsolv-2
Wet Bench Flexible Solvents 1 and 2 Training Flexible SNF Cleanroom Paul G Allen L107

Manual solvent cleaning, hot plate

Plasma Therm Versaline LL ICP Dielectric Etcher
PT-Ox
Plasma Therm Versaline LL ICP Dielectric Etcher Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

RTA AllWin 610
aw610_l
AllWin 610 RTA Training Clean SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 1
B1T1 Flexible Oxide
Tystar Atmospheric Tube Training Flexible SNF Cleanroom Paul G Allen L107
LEI1500 Contactless Sheet Resistance Mapping
eddycurrent
LEI1500 Contactless Sheet Resistance Mapping Training All SNF Exfab Paul G Allen 151 Ocean
micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training All SNF Exfab Paul G Allen 151 Ocean
Sinton Lifetime Tester
sinton-lifetime-tester
Sinton Lifetime Tester Training Flexible SNF Exfab Paul G Allen 151 Ocean
DISCO Wafer Saw
DISCO wafersaw
Wafersaw DISCO training Flexible SNF Exfab Paul G Allen 159 Capitola
Optomec Printer
optomec-printer
Optomec Printer Training Flexible SNF Exfab Paul G Allen 155A Venice
AJA Evaporator
aja-evap
Evaporator AJA training Flexible SNF Exfab Paul G Allen 155A Venice

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

Lesker Sputter
lesker-sputter
Sputter Lesker 1&2 Training Flexible SNF Exfab Paul G Allen 155A Venice

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

First Nano carbon nanotube CVD furnace
cvd-nanotube
cvd-nanotube training Flexible SNF Exfab Paul G Allen L119 Año Nuevo

Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density

Aixtron Black Magic graphene CVD furnace
aixtron-graphene
CVD graphene furnace Aixtron Black Magic training Flexible SNF Exfab Paul G Allen L119 Año Nuevo

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Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Developer Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
25.00 Å - 2.00 μm
300 °C - 500 °C
,
,
100
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Wet Bench Clean 1
wbclean-1
Clean
,
,
25
Wet Bench Clean 2
wbclean-2
Clean
,
,
25
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Clean
,
,
Wet Bench Clean_res-hf
wbclean_res-hf
Clean
,
,
Wet Bench Clean_res-piranha
wbclean_res-piranha
Clean
,
,
Wet Bench CMOS Metal
wbclean3
Semiclean
,
,
25 wafers
Wet Bench Decontamination
wbdecon
Clean
,
,
Wet Bench Flexcorr 1
wbflexcorr-1
Flexible ,
,
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,
Wet Bench Flexcorr 2
wbflexcorr-2
Flexible ,
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,
Wet Bench Flexcorr 3
wbflexcorr-3
Flexible ,
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,
Wet Bench Flexcorr 4
wbflexcorr-4
Flexible
Wet Bench Flexible Solvents
wbflexsolv
Flexible ,
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Wet Bench Flexible Solvents 1
wbflexsolv-1
Flexible ,
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Wet Bench Flexible Solvents 2
wbflexsolv-2
Flexible ,
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Wet Bench Miscellaneous
wbmiscres
Flexible ,
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