Quartz

Chemical Formula:

SiO2

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Exposure Wavelength	Mask Size	Max Exposure Area	Process Temperature Range	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	"All"						365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	"All"													Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Sheet Resistance Measurement Characterization > Hall measurement	"All"			100.00 μm - 1000.00 μm						-258 °C - 1000 °C		8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Other (ProMCom approval required) (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	"All"											8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Other (ProMCom approval required) (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten								Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly					°C - 800 °C	Ar N₂ O₂			Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	one 4 inch wafer, one 6 inch wafer
Matrix Plasma Resist Strip matrix	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Downstream/Remote Plasma Etching	Flexible	Resist	PI								O₂			4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂)	25
Micromanipulator6000 IV-CV probe station micromanipulator6000	Electrical Testing	"All"													Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1x4" wafer
Nanospec 210XP nanospec2	Characterization > Reflectometry	"All"													Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Oven (White) white-oven	Photolithography > Resist Bake > Oven Bake	Flexible									0 °C - 200 °C				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake	"All"									110 ºC				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Oven 90°C prebake oven90	Photolithography > Resist Bake > Oven Bake > Resist Prebake	"All"									90 ºC				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Oven BlueM 200°C to 430°C bluem	Photolithography > Resist Bake > Oven Bake	Flexible									0 °C - 430 °C				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Si3N4 SiC SiO₂ PI	C								Ar CF₄ CHF₃ N₂ O₂ SF₆			4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂)	1
Oxford Plasma Pro ICP-RIE Ox-gen	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible									-10 °C - 60 °C	Ar BCl₃ CF₄ CH₄ Cl₂ H₂ N₂ O₂ SF₆			Pieces 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	1
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon							0 °C - 40 °C	Ar BCl₃ C₄F₈ Cl₂ H₂ HBr O₂ SF₆			Pieces 4" 6" 8"	Silicon (Si) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Silicon Carbide (SiC) III-V (III-V)	1
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean	Si Si3N4 SiO₂ Poly Silicon								-20 °C - 40 °C	Ar C₄F₈ CF₄ CHF₃ N₂ NF₃ O₂ SF₆			Pieces 2" 3" 4" 6" 8"	Silicon (Si) Quartz (SiO2)	1
Oxford Plasma Pro PECVD Ox-PECVD	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	Semiclean, Flexible			100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON					200 °C - 350 °C	CF₄ CH₄ He NH₃ SF₆ SiH₄ Nitrous			Pieces 2" 3" 4" 6" 8"	Silicon (Si) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Silicon Carbide (SiC)	1
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition	Flexible				poly(p-xylylene)									Pieces 2" 3" 4" 6" 8" Cones Disks Other	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	"All"			100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON					100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous			Pieces 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) Lithium Niobate (LiNb)	4

Quartz

Equipment Tables

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