Quartz

Chemical Formula:

SiO2

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Wet Bench Flexcorr 1 wbflexcorr-1	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Xactix Xenon Difluoride Etcher xactix	Xactix Xenon Difluoride Etcher Training	"All"	SNF Paul G Allen L107 Cleanroom	Isotropic Si etching; can be used for backside Si removal on small pieces
Lesker2 Sputter lesker2-sputter	Sputter Lesker 1&2 Training	Semiclean	SNF Paul G Allen L107 Cleanroom	reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Tystar LPCVD Tube Training	Clean	SNF Paul G Allen L107 Cleanroom
Fiji 1 ALD fiji1	ALD Fiji 1 and 2 Training	Semiclean	SNF Paul G Allen L107 Cleanroom
Wet Bench Flexcorr 2 wbflexcorr-2	Wet Bench Flexcorr 1and2 and 3and4 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
Oxford Dielectric Etcher oxford-rie	Oxford Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
AJA2 Evaporator aja2-evap	Evaporator AJA2 Training	Flexible	SNF Paul G Allen L107 Cleanroom	For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
CHA Solutions II Evaporator cha-evap	Evaporator CHA Training	Flexible	SNF Paul G Allen L107 Cleanroom	For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Wet Bench CMOS Metal wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Paul G Allen L107 Cleanroom	Al, Ti, or W wet etching or oxide etching
SVG Develop Track 1 svgdev	SVG Resist Develop tracks 1 and 2 Training	"All"	SNF Paul G Allen L107 Cleanroom	Automatic development.
Sensofar S-neox s-neox	Sensofar S-neox Training	"All"	SNF Paul G Allen L107 Cleanroom	non contact 3D optical profiling
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Oxford Plasma Pro ICP-RIE ALE Training	Flexible	SNF Paul G Allen L107 Cleanroom
Wet Bench Miscellaneous wbmiscres	Wet Bench Miscellaneous Photoresist Training	Flexible	SNF Paul G Allen L107 Cleanroom	Manual development of resist in beakers and Headway (manual resist spinner). SNF approved developers (acid or base). No solvents!
EVG 101 Spray Coater evgspraycoat	Spray Coater EVG 101 Training	"All"	SNF Paul G Allen L107 Cleanroom	Spray coating of resists
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Oxford Plasma Pro ICP-RIE Ox Training	Clean	SNF Paul G Allen L107 Cleanroom
Wet Bench Resist Strip wbresstrip-1	Wet Bench Resist Strip	Clean (Ge), Semiclean, Flexible	SNF Paul G Allen L107 Cleanroom	Wet Resist Removal: SRS-100 or PRS1000
SVG Resist Coat Track 1 svgcoat	SVG Resist Coat Tracks 1 and 2 Training	"All"	SNF Paul G Allen L107 Cleanroom	Automatic Resist spinning and bake
Prometrix Resistivity Mapping System prometrix	Prometrix Training	"All"	SNF Paul G Allen L107 Cleanroom	3 Probe Heads for different cleanliness groups.
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Tystar Atmospheric Tube Training	Flexible	SNF Paul G Allen L107 Cleanroom

Pages

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Materials User Supplied	Process Temperature Range	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	"All"										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Hall measurement Characterization > Sheet Resistance Measurement	"All"			100.00 μm - 1000.00 μm			-258 °C - 1000 °C		8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	"All"								8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	1 wafer(2" to 8")
Lesker Sputter lesker-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Flexible				Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO	CoFeB Ge Hf In₂O₃ LaB₆ Ru Sc Sn TiN WO₃ ZnO₃ ZrY GST Hafnia Moly Ti Tungsten					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1 4 inch wafer, 1 6 inch wafer
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean			1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly		°C - 800 °C	Ar N₂ O₂			Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one 4 inch wafer, one 6 inch wafer
Matrix Plasma Resist Strip matrix	Etching > Dry Etching > Downstream/Remote Plasma Etching Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Flexible	Resist	PI					O₂			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	25
micromanipulator6000 IV-CV probe station micromanipulator6000	Characterization	"All"										Pieces 2" 3" 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb) , (Various)	1x4" wafer
Nanospec 210XP nanospec2	Characterization > Reflectometry	"All"										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven (White) white-oven	Photolithography > Resist Bake > Oven Bake	Flexible						0 °C - 200 °C				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven 110°C post-bake oven110	Photolithography > Resist Bake > Oven Bake > Resist Post Bake	"All"						110 ºC				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
Oven 90°C prebake oven90	Photolithography > Resist Bake > Oven Bake > Resist Prebake	"All"						90 ºC				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)
Oven BlueM 200°C to 430°C bluem	Photolithography > Resist Bake > Oven Bake	Flexible						0 °C - 430 °C				Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs) , (Various)
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Si3N4 SiC SiO₂ PI	C					Ar CF₄ CHF₃ N₂ O₂ SF₆			4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Oxford Plasma Pro ICP-RIE Ox-gen	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean						-10 °C - 60 °C	BCl₃ CF₄ Cl₂ O₂ SF₆			Pieces 4" 6"	(Si) , (SiGe) , (SiO2)	1
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon				0 °C - 40 °C	Ar BCl₃ C₄F₈ Cl₂ H₂ HBr O₂ SF₆			Pieces 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (III-V)	1
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean	Si Si3N4 SiO₂ Poly Silicon					-20 °C - 40 °C	Ar C₄F₈ CF₄ CHF₃ N₂ NF₃ O₂ SF₆			Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2)	1
Oxford Plasma Pro PECVD Ox-PECVD	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	Semiclean, Flexible			100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON		200 °C - 350 °C	CF₄ CH₄ He NH₃ SF₆ SiH₄ Nitrous			Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC)	1
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition	Flexible				poly(p-xylylene)						Pieces 2" 3" 4" 6" 8" Cones Disks Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)
PlasmaTherm Shuttlelock PECVD System ccp-dep	Deposition > Chemical Vapor Deposition (CVD) > Plasma Enhanced (PE) CVD	"All"			100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON		100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous			Pieces 4"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (LiNb)	4
Profilometer Alphastep 500 alphastep	Characterization > Surface Analysis > Profilometer > Step Profile	Flexible										Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1