The following is a list of equipment where 4 inch round substrates are allowed.
1:1 Contact Aligner. Backside align.
1:1 Contact Aligner. Backside align, including IR.
Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Wafers heated by lamps.
Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Spray coating of resists
CO2 drying after release of micromachined devices
Convection in N2. Cure. Programmable.
5:1 reducing stepper
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
500Å to 300µm
Bakes wafers with resist after the development, called post-bake.
Bakes wafers after resist coating.
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.