Sapphire

For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance

5:1 reducing stepper

CO2 drying after release of micromachined devices

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.