Chemical Formula:
Si
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Developer | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Oven 90°C prebake oven90 |
"All" |
90 ºC
|
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Oven BlueM 200°C to 430°C bluem |
Flexible |
0 °C - 430 °C
|
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|
Oxford Dielectric Etcher oxford-rie |
Flexible | 1 | |||||||||||
|
Oxford Plasma Pro ICP-RIE Ox-gen |
Flexible |
-10 °C - 60 °C
|
1 | ||||||||||
|
Oxford Plasma Pro ICP-RIE ALE Ox-ALE |
Flexible |
0 °C - 40 °C
|
1 | ||||||||||
|
Oxford Plasma Pro ICP-RIE Ox Ox-Ox |
Clean |
-20 °C - 40 °C
|
1 | ||||||||||
|
Oxford Plasma Pro PECVD Ox-PECVD |
Semiclean, Flexible |
100.00 Å -
4.00 μm
|
200 °C - 350 °C
|
1 | |||||||||
|
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible | ||||||||||||
|
PlasmaTherm Shuttlelock PECVD System ccp-dep |
"All" |
100.00 Å -
4.00 μm
|
100 °C - 350 °C
|
4 | |||||||||
|
Probe Station P200L Probe Station P200L |
"All" | 1 | |||||||||||
|
Profilometer Alphastep 500 alphastep |
Flexible | 1 | |||||||||||
|
Profilometer AlphaStep D-300 alphastep2 |
Flexible | 1 | |||||||||||
| Prometrix Resistivity Mapping System | 1 | ||||||||||||
|
RTA AllWin 610 aw610_l |
Pre-Diffusion Clean | Clean |
21 °C - 1150 °C
|
1 wafer | |||||||||
|
RTA AllWin 610 aw610_r |
Flexible |
21 °C - 1150 °C
|
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|
Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
Four 4" wafers or two 6" wafers and one 8" wafer | ||||||||||
|
Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
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|
Sensofar S-neox s-neox |
"All" | 1 | |||||||||||
|
SPTS uetch vapor etch uetch |
"All" | 1 | |||||||||||
|
SVG Develop Track 1 svgdev |
"All" | 25 4 inch wafers |