Deposition

Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Evaporation	KJL Evaporator 1	This e-beam evaporator can evaporate a variety of metals (no oxides) onto your substrates. It has an integrated ion mill for substrate precleaning and can do substrate tilting.		SNSF NPC Spilker suite 6
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Deposition	PDMS Workbench		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system.	Clean (MOCVD)	SNF MOCVD Paul G Allen 213XA
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200		Flexible	SNF MOCVD Paul G Allen 213XA
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Sputtering	Lesker Sputter lesker-sputter		Flexible	SNF Exfab Paul G Allen 155A Venice
Ink	Optomec Printer optomec-printer		Flexible	SNF Exfab Paul G Allen 155A Venice
Evaporation	AJA Evaporator aja-evap		Flexible	SNF Exfab Paul G Allen 155A Venice
Patterning, Ink	Voltera voltera		Flexible	SNF Exfab Paul G Allen 151 Ocean
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.	Clean	SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	LPCVD of TEOS Oxide.	Clean	SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.	All	SNF Paul G Allen L107 Cleanroom
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Clean	SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.	All	SNF Paul G Allen L107 Cleanroom
Evaporation	CHA Solutions II Evaporator cha-evap	cha-evap is a non-load locked e-beam evaporator designed for higher throughput.	Flexible	SNF Paul G Allen L107 Cleanroom
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Fiji1 is a load-locked, plasma-enabled atomic layer deposition (ALD) system.	Semiclean	SNF Paul G Allen L107 Cleanroom
Evaporation	Intlvac Evaporator Intlvac_evap		Clean, Semiclean	SNF Paul G Allen L107 Cleanroom

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Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene	Flexible	C		Pieces 2" 3" 4"	1x4" wafer or Copper/Nickel foil	800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂
Metal-Organic (MO) CVD	Aixtron MOCVD - III-N system aix-ccs	Clean (MOCVD)	AlGaN AlN GaN III-N materials InAlN InGaAlN InGaN InN	0.00 - 5.00 μm	Pieces 2" 4"	4"x1, 2"X3, pieces	400 °C - 1300 °C	H₂ MO sources N₂ NH₃ SiH₄		N and P doping available. For Si clean: SC1, SC2, HF dip. For Sapphire clean: SC1, SC2. For GaN template on Si or Sapphire: Piranha, SC1, SC2.
Metal-Organic (MO) CVD	Aixtron MOCVD - III-V system aix200	Flexible	AlAs AlGaAs GaAs GaP GaPN III-V materials InAs InGaAs InGaAsN	0.00 - 5.00 μm	Pieces 2" 4"	4"x1 wafer or 2"x1 wafer or 4 pieces	300 °C - 800 °C	H₂ MO sources N₂ SiH₄	Pre-Diffusion Clean	N and P doping available. For Si clean: SC1, SC2, HF dip. For III-V clean: HCl or HF dip.
Evaporation	AJA Evaporator aja-evap	Flexible	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces				For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
Evaporation	AJA2 Evaporator aja2-evap	Flexible	Ag Al Au Cr Cu Ni Pd Pt Ti	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces				For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD	AMAT Centurion Epitaxial System epi2	Clean	Ge Si SiGe	50.00 Å - 3.00 μm	4"	1	600 °C - 1200 °C	AsH₃ B₃H₆ GeH₄ H₂ N₂ PH₃ SiH₄	Pre-Diffusion Clean	N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Evaporation	CHA Solutions II Evaporator cha-evap	Flexible	Ag Al Au Cr Cu Ni Pd Pt Ti	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x15 or 6"x3 wafers or pieces				For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Semiclean	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Flexible	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ O₂
Plasma Enhanced (PE) ALD	Fiji 3 ALD fiji3	Flexible	SiO₂ Various Dielectrics Alumina Hafnia Titania	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂		Restricted to non-conductive films only
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube	Flexible	CNT		Pieces 2" 3" 4"	1x4" wafer or multiple pieces	800 °C - 1100 °C	Ar C₂H₅OH CH₄ H₂ O₂		Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet	Flexible	PROM Approval Required for Materials
Sputtering	Hummer V Sputter Coater hummer	Flexible
Evaporation	Intlvac Evaporator Intlvac_evap	Clean, Semiclean	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly	0.00 - 0.50 μm	Pieces 2" 3" 4" 6"	12 4 inch wafers, 2 6 inch wafers
Evaporation	KJL Evaporator 1		Al Au Cr Cu Ge Ni Pd Pt Ti V	200.00 nm	Pieces 2" 3" 4" 6"	1		Ar
Sputtering	Lesker Sputter lesker-sputter	Flexible	Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO		Pieces 2" 3" 4" 6"	1 4 inch wafer, 1 6 inch wafer				reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Sputtering	Lesker2 Sputter lesker2-sputter	Semiclean	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly	1.00 μm	Pieces 2" 3" 4" 6"	one 4 inch wafer, one 6 inch wafer	°C - 800 °C	Ar N₂ O₂		reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Thermal ALD	MVD mvd	Flexible	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 150 °C	Ar		Reactor located inside glovebox
Ink	Optomec Printer optomec-printer	Flexible			Pieces 2" 3" 4" 6"
Deposition	PDMS Workbench	Flexible	dimethylpolysiloxane

Techniques

Deposition

Technique Tabs

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