Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.
Isotropic Si etching; can be used for backside Si removal on small pieces
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Manual wet etching of non-standard materials. Hot pots available. GaAs allowed in personal labware only
4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Al, Ti, or W wet etching or oxide etching
Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching with high selectivity to thin gate oxides.
For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
