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Quartz

Chemical Formula: 
SiO2
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Equipment name & NEMO ID Training Required & Charges Cleanliness Locationsort descending Notes
PlasmaTherm Shuttlelock PECVD System
ccp-dep
PlasmaTherm Shuttlelock PECVD System Training All SNF Cleanroom Paul G Allen L107

To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing -

Substrates in clean category: Pre-Diffusion Clean

For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run

Wet Bench Clean 1
wbclean-1
Wet Bench Clean1and2 Training Clean SNF Cleanroom Paul G Allen L107

No resist allowed. Resist should have been removed at the wbclean_res-piranha.

EVG Contact Aligner
evalign
Contact Aligner EVG Training All SNF Cleanroom Paul G Allen L107

1:1 Contact Aligner.
Anodic Bond, backside align, including IR.

Heidelberg MLA 150 - 2
heidelberg2
Heidelberg Training All SNF Cleanroom Paul G Allen L107

Direct Write

Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Wet Bench Clean Piranha/HF/Phosphoric Training Clean SNF Cleanroom Paul G Allen L107

Resist should have been removed

Matrix Plasma Resist Strip
matrix
Matrix Plasma Resist Strip Training Flexible SNF Cleanroom Paul G Allen L107

Single wafer tool with auto loading from a cassette. Pieces need a pocket carrier wafer for transport. Chuck temperature controls wafer heating.

RTA AllWin 610
aw610_r
AllWin 610 RTA Training Flexible SNF Cleanroom Paul G Allen L107
Technics Asher
technics
Technics Asher Training Flexible SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Tystar LPCVD Tube Training Clean SNF Cleanroom Paul G Allen L107
Wet Bench Flexcorr 1
wbflexcorr-1
Wet Bench Flexcorr 1and2 and 3and4 Training Flexible SNF Cleanroom Paul G Allen L107

Manual wet etching of non-standard materials. Hot plate available. GaAs allowed in personal labware only.

Xactix Xenon Difluoride Etcher
xactix
Xactix Xenon Difluoride Etcher Training All SNF Cleanroom Paul G Allen L107

Isotropic Si etching; can be used for backside Si removal on small pieces

RTA AllWin 610
aw610_l
AllWin 610 RTA Training Clean SNF Cleanroom Paul G Allen L107
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Tystar LPCVD Tube Training Flexible SNF Cleanroom Paul G Allen L107
micromanipulator6000 IV-CV probe station
micromanipulator6000
micromanipulator6000 IV-CV probe station Training All SNF Exfab Paul G Allen 151 Ocean
LEI1500 Contactless Sheet Resistance Mapping
eddycurrent
LEI1500 Contactless Sheet Resistance Mapping Training All SNF Exfab Paul G Allen 151 Ocean
Lakeshore Hall Measurement System
LakeshoreHall
Lakeshore Hall Measurement System training All SNF Exfab Paul G Allen 151 Ocean
DISCO Wafer Saw
DISCO wafersaw
Wafersaw DISCO training Flexible SNF Exfab Paul G Allen 159 Capitola
AJA Evaporator
aja-evap
Evaporator AJA training Flexible SNF Exfab Paul G Allen 155A Venice

For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance

Lesker Sputter
lesker-sputter
Sputter Lesker 1&2 Training Flexible SNF Exfab Paul G Allen 155A Venice

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

Pages

Equipment name & NEMO ID Technique Cleaning Required Cleanliness Primary Materials Etched Other Materials Etched Material Thickness Range Materials Lab Supplied Developer Process Temperature Range Chemicals Gases Substrate Size Substrate Type Maximum Load
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
25.00 Å - 2.00 μm
300 °C - 500 °C
,
,
100
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 800 °C
,
,
50
Tystar Bank 3 Tube 11 TEOS
B3T11 Clean TEOS
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
420 °C - 630 °C
,
,
50
Tystar Bank 3 Tube 9
B3T9 Clean Oxide
Pre-Diffusion Clean Clean
25.00 Å - 2.00 μm
400 °C - 1100 °C
,
,
100
Wet Bench Clean 1
wbclean-1
Clean
,
,
25
Wet Bench Clean 2
wbclean-2
Clean
,
,
25
Wet Bench Clean_res- hotphos
wbclean_res-hotphos
Clean
,
,
Wet Bench Clean_res-hf
wbclean_res-hf
Clean
,
,
Wet Bench Clean_res-piranha
wbclean_res-piranha
Clean
,
,
Wet Bench CMOS Metal
wbclean3
Semiclean
,
,
25 wafers
Wet Bench Decontamination
wbdecon
Clean
,
,
Wet Bench Flexcorr 1
wbflexcorr-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 2
wbflexcorr-2
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexcorr 3
wbflexcorr-3
Flexible ,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents
wbflexsolv
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents 1
wbflexsolv-1
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Flexible Solvents 2
wbflexsolv-2
Flexible ,
,
,
,
,
,
,
,
,
,
Wet Bench Miscellaneous
wbmiscres
Flexible ,
,
,
,
,
,
,
,
Wet Bench Resist Strip
wbresstrip-1
Clean (Ge), Semiclean, Flexible
20 °C - 60 °C
,
,
,
,
,
,
25 4 inch wafers

Pages