Other (ProMCom approval required)

Chemical Formula:

Various

Equipment Tables

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth		Flexible				C	800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂			Pieces 2" 3" 4"	Silicon (Si) Other (ProMCom approval required) (Various)	1x4" wafer or Copper/Nickel foil
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible			0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Other (ProMCom approval required) (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible			0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Germanium (Ge) Other (ProMCom approval required) (Various)	4"x3 or 6"x1 wafers or pieces
CHA Solutions II Evaporator cha-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation		Flexible			0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Germanium (Ge) Other (ProMCom approval required) (Various)	4"x15 or 6"x3 wafers or pieces
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	24 °C - 350 °C	Ar H₂ N₂ O₂			Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
Heidelberg3 heidelberg3	Photolithography > Exposure > Direct Write		"All"									Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1
KLA-Rapier Deep Reactive Ion Etcher KLA-DSE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Pre-Diffusion Clean	Clean					-10 °C - 40 °C	Ar C₄F₈ O₂ SF₆			4"	Silicon (Si) Other (ProMCom approval required) (Various)	No through etch on full wafers. Stop 100microns before the through etch and use carrier wafer
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Sheet Resistance Measurement Characterization > Hall measurement		"All"			100.00 μm - 1000.00 μm		-258 °C - 1000 °C		8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Other (ProMCom approval required) (Various)	1 piece
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement		"All"							8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Other (ProMCom approval required) (Various)	1 wafer(2" to 8")
Micromanipulator6000 IV-CV probe station micromanipulator6000	Electrical Testing		"All"									Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1x4" wafer
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition		Flexible				poly(p-xylylene)					Pieces 2" 3" 4" 6" 8" Cones Disks Other	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
Probe Station P200L Probe Station P200L	Electrical Testing		"All"									Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Other (ProMCom approval required) (Various)	1
Samco PC300 Plasma Etch System samco	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE) Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI			20 ºC	CF₄ O₂ SF₆			Pieces 2" 3" 4" 6" 8" Other	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	24 °C - 250 °C	N₂			Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
Woollam woollam	Characterization > Ellipsometry		"All"									Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1