Oxygen | Stanford Nanofabrication Facility

Chemical Formula:

O₂

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched	Gases
Gasonics Aura Asher gasonics	Clean Semiclean	SNF Paul G Allen L107 Cleanroom	Resist	PI	O₂
Lam Research TCP 9400 Poly Etcher lampoly	Clean Semiclean	SNF Paul G Allen L107 Cleanroom	Si	Ge SiGe	80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂
Matrix Plasma Resist Strip matrix	Flexible	SNF Paul G Allen L107 Cleanroom	Resist	PI	O₂
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia	Ar CHClF₂ CHF₃ O₂ SF₆
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Paul G Allen L107 Cleanroom	Si3N4 SiC SiO₂ PI	C	Ar CF₄ CHF₃ N₂ O₂ SF₆
Oxford III-V etcher Ox-35	Flexible	SNF Paul G Allen L107 Cleanroom	GaAs	AlGaN AlInP GaN InGaP InSb	Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆
Oxford Plasma Pro ICP-RIE Ox-gen	Flexible	SNF Paul G Allen L107 Cleanroom			Ar BCl₃ CF₄ CH₄ Cl₂ H₂ N₂ O₂ SF₆
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Flexible	SNF Paul G Allen L107 Cleanroom	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon	Ar BCl₃ C₄F₈ Cl₂ H₂ HBr O₂ SF₆
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Clean	SNF Paul G Allen L107 Cleanroom	Si Si3N4 SiO₂ Poly Silicon		Ar C₄F₈ CF₄ CHF₃ N₂ NF₃ O₂ SF₆
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Flexible	SNF Paul G Allen L107 Cleanroom	Si		Ar C₄F₈ O₂ SF₆
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Paul G Allen L107 Cleanroom	C Si3N4 SiC SiO₂	Various C-based	Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Flexible	SNF Paul G Allen L107 Cleanroom	Metals or metal compounds with volatile byproducts Al	GaN	Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆
Samco PC300 Plasma Etch System samco	Flexible	SNF Paul G Allen L107 Cleanroom	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI	CF₄ O₂ SF₆
Technics Asher technics	Flexible	SNF Paul G Allen L107 Cleanroom	Resist	dimethylpolysiloxane poly(p-xylylene) PI	O₂

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
Fiji 1 ALD fiji1	Semiclean	SNF Paul G Allen L107 Cleanroom	1.00 Å - 50.00 nm	Metal oxides Al₂O₃ HfN HfO₂ Pt Ru SiO₂ Ta₂O₅ TaN TiN TiO₂ Various Dielectrics ZrO₂
Fiji 2 ALD fiji2	Flexible	SNF Paul G Allen L107 Cleanroom	1.00 Å - 50.00 nm	Metal oxides Al₂O₃ Ga₂O₃ HfN HfO₂ In₂O₃ In_xSn_yO_z MoO₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN TiO₂ Various Dielectrics ZrO₂
Fiji 3 ALD fiji3	Flexible	SNF Paul G Allen L107 Cleanroom	1.00 Å - 50.00 nm	Al₂O₃ HfO₂ SiO₂ TiO₂ Various Dielectrics
First Nano carbon nanotube CVD furnace cvd-nanotube	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo		C
Lesker2 Sputter lesker2-sputter	Semiclean	SNF Paul G Allen L107 Cleanroom	1.00 μm	Ag Al Al₂O₃ AlSi Cr Ge In_xSn_yO_z Mo Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W
PlasmaTherm Versaline HDP CVD System hdpcvd	"All"	SNF Paul G Allen L107 Cleanroom	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
RTA AllWin 610 aw610_l	Clean	SNF Paul G Allen L107 Cleanroom
RTA AllWin 610 aw610_r	Flexible	SNF Paul G Allen L107 Cleanroom
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Flexible	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Clean	SNF Paul G Allen L107 Cleanroom	25.00 Å - 2.00 μm	SiO₂