4 inch wafer

Short Name:

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment Tables

Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	SiO₂	300 °C - 500 °C		N₂ O₂ PH₃ SiH₄	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Germanium (Ge) Silicon Carbide (SiC) III-V (III-V)	100
Tystar Bank 2 Tube 5 B2T5 Clean Anneal	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm		400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	100
Tystar Bank 2 Tube 6 B2T6 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂	400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	100
Tystar Bank 2 Tube 7 Nitride B2T7 Flexible Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Flexible			25.00 Å - 2.00 μm	Si3N4 SiON	420 °C - 800 °C		NH₃ DCS	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	50
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD		Clean			25.00 Å - 2.00 μm	SiO₂	300 °C - 500 °C		N₂ O₂ PH₃ SiH₄	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	100
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si3N4 SiON	420 °C - 800 °C		NH₃ DCS	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	50
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂	420 °C - 630 °C		N₂ O₂ Si(OC₂H₅)₄	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	50
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Deposition > Chemical Vapor Deposition (CVD) > Low Pressure (LP) CVD	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	Si Poly Silicon	420 °C - 630 °C		B₂H₆ GeH₄ N₂ PH₃ SiH₄	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	50
Tystar Bank 3 Tube 9 B3T9 Clean Oxide	Annealing & Oxidation > Oxide Growth (furnace)	Pre-Diffusion Clean	Clean			25.00 Å - 2.00 μm	SiO₂	400 °C - 1100 °C		4% H₂ in N₂ N₂ O₂	4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	100
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean						50:1 HF SC1 SC2		3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing		Clean						50:1 HF 6:1 BOE SC1 SC2		3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Etching > Wet Etching > Silicon Nitride Wet Etching Wet Chemical Processing		Clean	Si3N4							3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Etching > Wet Etching > Silicon Oxide Wet Etching Wet Chemical Processing		Clean	SiO₂					20:1 BOE 50:1 HF 6:1 BOE		3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)
Wet Bench Clean_res-piranha wbclean_res-piranha	Cleaning > Piranha Cleaning Cleaning > Resist Removal > Wet Resist Removal Wet Chemical Processing		Clean						9:1 Piranha		3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)
Wet Bench CMOS Metal wbclean3	Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Wet Chemical Processing		Semiclean	Al Ti W					20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch		3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	25 wafers
Wet Bench Decontamination wbdecon	Cleaning > Decontamination Wet Chemical Processing		Clean						SC2		3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)
Wet Bench Flexcorr 1 wbflexcorr-1	Cleaning > Decontamination Cleaning > Metal Clean Cleaning > Piranha Cleaning Cleaning > Resist Removal > Wet Resist Removal Etching > Wet Etching > Acid or Base Wet Etching Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching Etching > Wet Etching > Silicon Wet Etching Etching > Wet Etching > Silicon Oxide Wet Etching Wet Chemical Processing		Flexible	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W				Acids Bases Gold Etchant 20:1 BOE 50:1 HF 6:1 BOE 9:1 Piranha Al-Etch Chrome Etch KOH SC1 SC2		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)
Wet Bench Flexcorr 2 wbflexcorr-2	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible						Acids Bases		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)
Wet Bench Flexcorr 3 wbflexcorr-3	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible						Acids Bases		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Polymer (Various)
Wet Bench Flexcorr 4 wbflexcorr-4	Etching > Wet Etching > Acid or Base Wet Etching Cleaning > Piranha Cleaning Wet Chemical Processing		Flexible						Acids Bases		Pieces 2" 3" 4" 6"

4 inch wafer

Equipment Tables

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