SNF: Dry Etching

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
Gasonics Aura Asher gasonics	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Downstream/Remote Plasma Etching	Clean, Semiclean	Resist	PI		O₂	4"	Silicon (Si)	25
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si	Ge SiGe		80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂	4"	Silicon (Si) Silicon Germanium (SiGe)	25
Matrix Plasma Resist Strip matrix	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Downstream/Remote Plasma Etching	Flexible	Resist	PI		O₂	4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂)	25
MRC Reactive Ion Etcher mrc	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia		Ar CHClF₂ CHF₃ O₂ SF₆	Pieces 2" 3" 4" 6"		1
Oxford Dielectric Etcher oxford-rie	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)	Flexible	Si3N4 SiC SiO₂ PI	C		Ar CF₄ CHF₃ N₂ O₂ SF₆	4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂)	1
Oxford III-V etcher Ox-35	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	GaAs	AlGaN AlInP GaN InGaP InSb		Ar BCl₃ CH₄ Cl₂ H₂ HBr N₂ O₂ SF₆	4"		1
Oxford Plasma Pro ICP-RIE Ox-gen	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible			-10 °C - 60 °C	Ar BCl₃ CF₄ CH₄ Cl₂ H₂ N₂ O₂ SF₆	Pieces 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	1
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon	0 °C - 40 °C	Ar BCl₃ C₄F₈ Cl₂ H₂ HBr O₂ SF₆	Pieces 4" 6" 8"	Silicon (Si) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Silicon Carbide (SiC) III-V (III-V)	1
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean	Si Si3N4 SiO₂ Poly Silicon		-20 °C - 40 °C	Ar C₄F₈ CF₄ CHF₃ N₂ NF₃ O₂ SF₆	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Quartz (SiO2)	1
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	Si			Ar C₄F₈ O₂ SF₆	4" 6"		1
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	C Si3N4 SiC SiO₂	Various C-based		Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂	4" 6"		1
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Flexible	Metals or metal compounds with volatile byproducts Al	GaN		Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆	4" 6"		1
Samco PC300 Plasma Etch System samco	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE) Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI	20 ºC	CF₄ O₂ SF₆	Pieces 2" 3" 4" 6" 8" Other	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
SPTS uetch vapor etch uetch	Etching > Vapor Etching	"All"	SiO₂			C₂H₅OH HF vapor	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
Technics Asher technics	Cleaning > Resist Removal > Dry Resist Removal Etching > Dry Etching	Flexible	Resist	dimethylpolysiloxane poly(p-xylylene) PI		O₂	Pieces 4" 6" 8"	Silicon (Si) Quartz (SiO2) Glass (SiO₂)	Four 4" wafers to pieces, one 6" or 8" wafer
Xactix Xenon Difluoride Etcher xactix	Etching > Vapor Etching	"All"	Ge Si SiGe			N₂ XeF₂	Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1