Deposition

Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Fiji1 is a load-locked, plasma-enabled atomic layer deposition (ALD) system.	Semiclean	SNF Cleanroom Paul G Allen L107
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Fiji2 is a load-locked, plasma-enabled atomic layer deposition (ALD) system. Fiji2 is currently classified as Flexible and is open to a wide range of metals and dielectrics.	Flexible	SNF Cleanroom Paul G Allen L107
Thermal ALD	Savannah ALD savannah		Flexible	SNF Cleanroom Paul G Allen L107
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Patterning, Ink	Voltera voltera		Flexible	SNF Exfab Paul G Allen 151 Ocean
Evaporation	Intlvac Evaporator Intlvac_evap		Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Sputtering	Hummer V Sputter Coater hummer		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Ink	Optomec Printer optomec-printer		Flexible	SNF Exfab Paul G Allen 155A Venice
Deposition	PDMS Workbench		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Low Pressure (LP) CVD	Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon, Silicon-Germanium.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	LPCVD of Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	LPCVD of TEOS Oxide.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Clean	SNF Cleanroom Paul G Allen L107
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Evaporation	AJA2 Evaporator aja2-evap	This E-beam evaporator can evaporate a variety of metals (no oxides) onto your substrates. It has an integrated ion mill for substrate precleaning.	Flexible	SNF Cleanroom Paul G Allen L107

Pages

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Plasma Enhanced (PE) ALD	Fiji 1 ALD fiji1	Semiclean	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ NH₃ O₂
Graphene CVD Growth	Aixtron Black Magic graphene CVD furnace aixtron-graphene	Flexible	C		Pieces 2" 3" 4"	1x4" wafer or Copper/Nickel foil	800 °C - 1100 °C	78% N₂, 21% O₂, ~1% Ar CH₄ H₂
Plasma Enhanced (PE) ALD	Fiji 2 ALD fiji2	Flexible	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 350 °C	Ar H₂ N₂ O₂
Thermal ALD	Savannah ALD savannah	Flexible	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 250 °C	N₂
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Flexible	poly(p-xylylene)		Pieces 2" 3" 4" 6" 8" Cones Disks Other
Patterning, Ink	Voltera voltera	Flexible	Various conductive inks Various custom inks
Evaporation	Intlvac Evaporator Intlvac_evap	Clean, Semiclean	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly	0.00 - 0.50 μm	Pieces 2" 3" 4" 6"	12 4 inch wafers, 2 6 inch wafers
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet	Flexible	PROM Approval Required for Materials
Sputtering	Hummer V Sputter Coater hummer	Flexible
Ink	Optomec Printer optomec-printer	Flexible			Pieces 2" 3" 4" 6"
Deposition	PDMS Workbench	Flexible	dimethylpolysiloxane
Low Pressure (LP) CVD	Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Flexible	Ge Si SiGe Poly Silicon	25.00 Å - 2.00 μm	4" 6"	100	420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Clean	Si Poly Silicon	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Clean	Si3N4 SiON	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 800 °C	NH₃ DCS	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Clean	Si3N4 SiON	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 800 °C	NH₃ DCS	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Flexible	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	300 °C - 500 °C	N₂ O₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	50	420 °C - 630 °C	N₂ O₂ Si(OC₂H₅)₄	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Clean	SiO₂	25.00 Å - 2.00 μm	4" 6"	100	300 °C - 500 °C	N₂ O₂ PH₃ SiH₄
Carbon Nanotube CVD Growth	First Nano carbon nanotube CVD furnace cvd-nanotube	Flexible	CNT		Pieces 2" 3" 4"	1x4" wafer or multiple pieces	800 °C - 1100 °C	Ar C₂H₅OH CH₄ H₂ O₂		Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Evaporation	AJA2 Evaporator aja2-evap	Flexible	Ag Al Au Cr Cu Ni Pd Pt Ti	0.00 - 300.00 nm	Pieces 2" 3" 4" 6"	4"x3 or 6"x1 wafers or pieces				For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance