Chemical Formula:
SiO2
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Process Temperature Range | Gases | Sample Size Limits | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Probe Station P200L Probe Station P200L |
"All" | 1 | |||||||||||
|
Profilometer Alphastep 500 alphastep |
Flexible | 1 | |||||||||||
|
Profilometer AlphaStep D-300 alphastep2 |
Flexible | 1 | |||||||||||
| Prometrix Resistivity Mapping System | 1 | ||||||||||||
|
RTA AllWin 610 aw610_l |
Pre-Diffusion Clean | Clean |
21 °C - 1150 °C
|
1 wafer | |||||||||
|
RTA AllWin 610 aw610_r |
Flexible |
21 °C - 1150 °C
|
|||||||||||
|
Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
Four 4" wafers or two 6" wafers and one 8" wafer | ||||||||||
|
Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
||||||||||
|
SEM -Zeiss Merlin sem-merlin |
"All" |
0.00 mm -
35.00 mm
|
6 in wafer | one | |||||||||
|
Sensofar S-neox s-neox |
"All" | 1 |