Short Name:
4"
The following is a list of equipment where 4 inch round substrates are allowed.
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
Oxford Plasma Pro ICP-RIE ALE Ox-ALE |
Flexible |
0 °C - 40 °C
|
1 | ||||||||
|
Oxford Plasma Pro ICP-RIE Ox Ox-Ox |
Clean |
-20 °C - 40 °C
|
1 | ||||||||
|
Oxford Plasma Pro PECVD Ox-PECVD |
Semiclean, Flexible |
100.00 Å -
4.00 μm
|
200 °C - 350 °C
|
1 | |||||||
|
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible | ||||||||||
|
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE |
Flexible | 1 | |||||||||
|
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox |
Flexible | 1 | |||||||||
|
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL |
Flexible | 1 | |||||||||
|
Plasmaetch PE-50 plasma-etch |
Flexible | Multiple | |||||||||
|
PlasmaTherm Shuttlelock PECVD System ccp-dep |
"All" |
100.00 Å -
4.00 μm
|
100 °C - 350 °C
|
4 | |||||||
|
PlasmaTherm Versaline HDP CVD System hdpcvd |
"All" |
500.00 Å -
4.00 μm
|
50 °C - 150 °C
|
1 |