4 inch wafer

Short Name:

4"

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Gasonics Aura Asher gasonics	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Downstream/Remote Plasma Etching	Clean, Semiclean	Resist	PI										O₂	4"	Silicon (Si)	25
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	"All"									Resists Shipley 3612 resist SPR220-3 resist SPR220-7				Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	"All"									AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	"All"						405 nm							Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	"All"						375 nm							Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Heidelberg3 heidelberg3	Photolithography > Exposure > Direct Write	"All"													Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Wafer Prime (HMDS) Photolithography > Wafer preparation before resist > Singe	"All"										150 ºC	[(CH₃)₃Si]₂NH		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly									Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	"All"						365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	"All"						365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)

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