Chemical Formula:
Si
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Primary Materials Etched | Material Thickness Range | Materials Lab Supplied | Process Temperature Range | Chemicals | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
420 °C - 800 °C
|
50 | |||||||
|
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
50 | |||||||
|
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
50 | |||||||
|
Tystar Bank 3 Tube 9 B3T9 Clean Oxide |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
100 | |||||||
|
Wet Bench Clean 1 wbclean-1 |
Clean | 25 | ||||||||||
|
Wet Bench Clean 2 wbclean-2 |
Clean | 25 | ||||||||||
|
Wet Bench Clean_res- hotphos wbclean_res-hotphos |
Clean | |||||||||||
|
Wet Bench Clean_res-hf wbclean_res-hf |
Clean | |||||||||||
|
Wet Bench Clean_res-piranha wbclean_res-piranha |
Clean | |||||||||||
|
Wet Bench CMOS Metal wbclean3 |
Semiclean | 25 wafers |