Silicon

Chemical Formula:

Si

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Resolution Notes	Substrate Size	Substrate Type	Maximum Load
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	"All"						375 nm								Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Heidelberg3 heidelberg3	Photolithography > Exposure > Direct Write	"All"														Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Wafer Prime (HMDS) Photolithography > Wafer preparation before resist > Singe	"All"									150 ºC	[(CH₃)₃Si]₂NH				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean			0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly										Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	"All"						365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch						Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)
Karl Suss MA-6 Contact Aligner karlsuss2	Photolithography > Exposure > Contact Aligner	"All"						365 nm or 405 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch						Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	"All"														Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Lakeshore Hall Measurement System LakeshoreHall	Characterization > Sheet Resistance Measurement Characterization > Hall measurement	"All"			100.00 μm - 1000.00 μm						-258 °C - 1000 °C			8 in wafer	Sensor Transducer Size is 14 mm diameter	Pieces	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Other (ProMCom approval required) (Various)	1 piece
Lam Research TCP 9400 Poly Etcher lampoly	Etching > Dry Etching > Inductively Coupled Plasma Etching (ICP)	Clean, Semiclean	Si	Ge SiGe									80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂			4"	Silicon (Si) Silicon Germanium (SiGe)	25
LEI1500 Contactless Sheet Resistance Mapping eddycurrent	Characterization > Sheet Resistance Measurement	"All"												8 in wafer	Sensor Transducer Size is 14 mm diameter	2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Other (ProMCom approval required) (Various)	1 wafer(2" to 8")

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