Deposition

Deposition covers a wide variety of methods that are used to add a wide variety of materials. The subcategories here can be useful to help narrow down your search.

Atomic Layer Deposition (ALD) is used to deposit less than 50nm of highly conformal films.
Chemical Vapor Deposition (CVD) is used to deposit films less than 5μm thick, carbon nanotubes, and graphene.
Deposited III-N uses a type of CVD called MOCVD to deposit the nitrides of materials that are found in group III of the periodic table.
Deposited III-V uses a type of CVD called MOCVD to deposit combinations of materials from group III and group V of the periodic table.
Ink lists the equipment that can be used to print inks that are either commercially available or made by the user.
Physical Vapor Deposition (PVD) is used to deposit primarily metal layers as well as some dielectrics.

Technique Tabs

Main Tab

Processing Techniques	Equipment name & NEMO ID	Teaser Blurb	Cleanliness	Location
Patterning, Ink	Voltera voltera		Flexible	SNF Exfab Paul G Allen 151 Ocean
Low Pressure (LP) CVD	Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	LPCVD of TEOS Oxide.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.	Clean	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.	Flexible	SNF Cleanroom Paul G Allen L107
Low Pressure (LP) CVD	Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon, Silicon-Germanium.	Flexible	SNF Cleanroom Paul G Allen L107
Thermal ALD	Savannah ALD savannah		Flexible	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.	All	SNF Cleanroom Paul G Allen L107
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.	All	SNF Cleanroom Paul G Allen L107
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Deposition	PDMS Workbench		Flexible	SNF Exfab Paul G Allen 155 Mavericks
Ink	Optomec Printer optomec-printer		Flexible	SNF Exfab Paul G Allen 155A Venice
Thermal ALD	MVD mvd	MVD is a molecular vapor deposition (MVD) system. It is a self assembling monolayers (SAMs)-based configuration of a Savannah S200 from Cambridge Nanotech with 1 SAMs delivery port and 4 standard atomic layer deposition (ALD) lines. The system can accommodate pieces up to an 8" wafer.	Flexible	SNF Cleanroom Paul G Allen L107
Sputtering	Lesker2 Sputter lesker2-sputter		Semiclean	SNF Cleanroom Paul G Allen L107
Sputtering	Lesker Sputter lesker-sputter		Flexible	SNF Exfab Paul G Allen 155A Venice
Evaporation	Intlvac Evaporator Intlvac_evap		Clean, Semiclean	SNF Cleanroom Paul G Allen L107
Sputtering	Hummer V Sputter Coater hummer		Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet		Flexible	SNF Exfab Paul G Allen 155 Mavericks

Pages

Detail Tab

Processing Technique	Equipment name & NEMO ID	Cleanliness	Materials Lab Supplied	Material Thickness Range	Substrate Size	Maximum Load (number of wafers)	Process Temperature Range	Gases	Cleaning Required	Notes
Patterning, Ink	Voltera voltera	Flexible	Various conductive inks Various custom inks
Low Pressure (LP) CVD	Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly	Clean		25.00 Å - 2.00 μm	4" 6"	50	420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS	Clean		25.00 Å - 2.00 μm	4" 6"	50	420 °C - 630 °C	N₂ O₂ Si(OC₂H₅)₄	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride	Clean		25.00 Å - 2.00 μm	4" 6"	50	420 °C - 800 °C	NH₃ DCS	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO	Clean		25.00 Å - 2.00 μm	4" 6"	100	300 °C - 500 °C	N₂ O₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride	Clean		25.00 Å - 2.00 μm	4" 6"	50	420 °C - 800 °C	NH₃ DCS	Pre-Diffusion Clean
Low Pressure (LP) CVD	Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO	Flexible		25.00 Å - 2.00 μm	4" 6"	100	300 °C - 500 °C	N₂ O₂ PH₃ SiH₄
Low Pressure (LP) CVD	Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly	Flexible		25.00 Å - 2.00 μm	4" 6"	100	420 °C - 630 °C	B₂H₆ GeH₄ N₂ PH₃ SiH₄
Thermal ALD	Savannah ALD savannah	Flexible	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 250 °C	N₂
Plasma Enhanced (PE) CVD	PlasmaTherm Versaline HDP CVD System hdpcvd	All	Si Si3N4 SiC SiO₂ SiON	500.00 Å - 4.00 μm	Pieces 4"	1	50 °C - 150 °C	Ar N₂ O₂ SF₆ SiH₄		To maintain cleanliness level there are cleans required for both the chamber and wafers prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Plasma Enhanced (PE) CVD	PlasmaTherm Shuttlelock PECVD System ccp-dep	All	Si Si3N4 SiC SiO₂ SiON	100.00 Å - 4.00 μm	Pieces 4"	4	100 °C - 350 °C	5% SiH₄ in He CH₄ He N₂ NH₃ SF₆ Nitrous		To maintain cleanliness level, cleans of both the chamber and wafers are required prior to processing - Substrates in clean category: Pre-Diffusion Clean For semi-clean substrates: Standard Metal Clean (SRS100 + PRS1000) . Run Chamber clean (no dummies) and conditioning with clean dummies prior to run
Deposition	PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Flexible	poly(p-xylylene)		Pieces 2" 3" 4" 6" 8" Cones Disks Other
Deposition	PDMS Workbench	Flexible	dimethylpolysiloxane
Ink	Optomec Printer optomec-printer	Flexible			Pieces 2" 3" 4" 6"
Thermal ALD	MVD mvd	Flexible	C₉H₂₃NO₃Si Various Dielectrics Alumina DETA Hafnia ODS SAMS	1.00 Å - 50.00 nm	Pieces 2" 3" 4" 6" 8"		24 °C - 150 °C	Ar		Reactor located inside glovebox
Sputtering	Lesker2 Sputter lesker2-sputter	Semiclean	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly	1.00 μm	Pieces 2" 3" 4" 6"	one 4 inch wafer, one 6 inch wafer	°C - 800 °C	Ar N₂ O₂		reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Sputtering	Lesker Sputter lesker-sputter	Flexible	Ag Al AlSi Au Co Cr Cu Fe Nb Ni Pd Si SiO₂ Ta Ti TiN W Alumina ITO		Pieces 2" 3" 4" 6"	1 4 inch wafer, 1 6 inch wafer				reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Evaporation	Intlvac Evaporator Intlvac_evap	Clean, Semiclean	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly	0.00 - 0.50 μm	Pieces 2" 3" 4" 6"	12 4 inch wafers, 2 6 inch wafers
Sputtering	Hummer V Sputter Coater hummer	Flexible
Ink	Fujifilm Dimatix Ink Jet Printer nanoinkjet	Flexible	PROM Approval Required for Materials