Short Name:
4"
The following is a list of equipment where 4 inch round substrates are allowed.
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Resist | Developer | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sinton Lifetime Tester sinton-lifetime-tester |
Flexible | ||||||||||||
|
SPTS uetch vapor etch uetch |
"All" | 1 | |||||||||||
|
SVG Develop Track 1 svgdev |
"All" | 25 4 inch wafers | |||||||||||
|
SVG Develop Track 2 svgdev2 |
"All" | 25 4 inch wafers | |||||||||||
|
SVG Resist Coat Track 1 svgcoat |
"All" | 25 4 inch wafers | |||||||||||
|
SVG Resist Coat Track 2 svgcoat2 |
"All" | 25 4 inch wafers | |||||||||||
|
Technics Asher technics |
Flexible | Four 4" wafers to pieces, one 6" or 8" wafer | |||||||||||
|
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
100 | |||||||||
|
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
100 | |||||||||
|
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly |
Flexible |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
100 |