Chemical Formula:
SiO2
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
Oven 110°C post-bake oven110 |
"All" |
110 ºC
|
|||||||||
|
Oven 90°C prebake oven90 |
"All" |
90 ºC
|
|||||||||
|
Oven BlueM 200°C to 430°C bluem |
Flexible |
0 °C - 430 °C
|
|||||||||
|
Oxford Dielectric Etcher oxford-rie |
Flexible | 1 | |||||||||
|
Oxford Plasma Pro ICP-RIE Ox-gen |
Flexible |
-10 °C - 60 °C
|
1 | ||||||||
|
Oxford Plasma Pro ICP-RIE ALE Ox-ALE |
Flexible |
0 °C - 40 °C
|
1 | ||||||||
|
Oxford Plasma Pro ICP-RIE Ox Ox-Ox |
Clean |
-20 °C - 40 °C
|
1 | ||||||||
|
Oxford Plasma Pro PECVD Ox-PECVD |
Semiclean, Flexible |
100.00 Å -
4.00 μm
|
200 °C - 350 °C
|
1 | |||||||
|
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible | ||||||||||
|
PlasmaTherm Shuttlelock PECVD System ccp-dep |
"All" |
100.00 Å -
4.00 μm
|
100 °C - 350 °C
|
4 |