Quartz

Chemical Formula:

SiO2

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Minimum Resolution	Exposure Wavelength	Mask Size	Max Exposure Area	Resist	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Finetech Lambda flipchipbonder	Bonding	Flexible								°C - 400 °C			Pieces 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge)	1
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth	Flexible		CNT						800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	Silicon (Si) Quartz (SiO2)	1x4" wafer or multiple pieces
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	"All"											3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	"All"							AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	"All"				405 nm							Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	"All"				375 nm							Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Heidelberg3 heidelberg3	Photolithography > Exposure > Direct Write	"All"											Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Wafer Prime (HMDS) Photolithography > Wafer preparation before resist > Singe	"All"								150 ºC	[(CH₃)₃Si]₂NH		Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Intlvac Evaporator Intlvac_evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Clean, Semiclean	0.00 - 0.50 μm	Al Co Cr Ge Hf Nb Ni Pd Si Ta Ti V W Zr Moly									Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2)	12 4 inch wafers, 2 6 inch wafers
Karl Suss MA-6 Contact Aligner karlsuss	Photolithography > Exposure > Contact Aligner	"All"				365 nm	4 inch, 5 inch, 7 inch	5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch					Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various)

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