Silicon

Chemical Formula:

Single Crystal Silicon (LPCVD):
Growing silicon layer with a continuous single crystal lattice structure.
(epi2)

PolySi (LPCVD):
PolySi Polysilicon can be deposited using the processing technique LPCVD. Polysilicon layers do not have a continuous structure (unlike single crystal continuous layers).
(epi2, Thermcopoly, Thermocopy 2)

Amorphous Silicon (LPCVD):
Poly crystalline or amorphous silicon is deposited by low pressure chemical vapor deposition at temperatures between 550-800C and silane as the precursor for Thermcopoly. Temperatures between 600C-1150C, Silane and dichlorosilane as precirsor for Epi2. By adding sopants to the reaction mxture, doped Si can be deposited as well.
(epi2, ThermcoPoly1, ThermcoPoly2)

Amorphous Silicon (PECVD):
a-Si is deposited at low temperatures in PECVD (200C - 350C) and HDPCVD (50C - 140C). 5% Silane or 100% Silane used as the precursor for depositing amorphous silicon onto substrates in the PECVD system.
(CCP-dep, hdpcvd)

Equipment Tabs

Annealing & Oxidation Equipment

Deposition Equipment
Equipment name & Badger ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AMAT Centurion Epitaxial System epi2	Clean	SNF Cleanroom Paul G Allen L107	50.00 Å - 3.00 μm	Ge Si SiGe

Deposition Equipment

Deposition Equipment
Equipment name & Badger ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
AJA2 Evaporator aja2-evap	Flexible	SNF Cleanroom Paul G Allen L107	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Si Ti
AMAT Centurion Epitaxial System epi2	Clean	SNF Cleanroom Paul G Allen L107	50.00 Å - 3.00 μm	Ge Si SiGe
Intlvac Evaporator Intlvac_evap	Clean Semiclean	SNF Cleanroom Paul G Allen L107	0.00 - 0.50 μm	Al Co Cr Ge Hf Mo Nb Ni Pd Si Ta Ti V W Zr
Lesker Sputter lesker-sputter	Flexible	SNF Exfab Paul G Allen 155A Venice		Ag Al Al₂O₃ AlSi Au Co Cr Cu Fe In_xSn_yO_z Nb Ni Pd Si SiO₂ Ta Ti TiN W
Lesker2 Sputter lesker2-sputter	Semiclean	SNF Cleanroom Paul G Allen L107	1.00 μm	Ag Al Al₂O₃ AlSi Cr Ge In_xSn_yO_z Mo Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W
PlasmaTherm Shuttlelock PECVD System ccp-dep	All	SNF Cleanroom Paul G Allen L107	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON
PlasmaTherm Versaline HDP CVD System hdpcvd	All	SNF Cleanroom Paul G Allen L107	500.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON

Etching Equipment

Etch Equipment
Equipment name & Badger ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
AMAT P5000 Etcher p5000etch	Clean Clean (Ge) Semiclean	SNF Cleanroom Paul G Allen L107	Si Si3N4 SiGe SiO₂ SiON	C C C dimethylpolysiloxane poly(p-xylylene) SiC Ti Various C-based W WSi₂ PI Resist Ti Tungsten
Lam Research TCP 9400 Poly Etcher lampoly	Clean Semiclean	SNF Cleanroom Paul G Allen L107	Si	Ge SiGe
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Flexible	SNF Cleanroom Paul G Allen L107	Si
Samco PC300 Plasma Etch System samco	Flexible	SNF Cleanroom Paul G Allen L107	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI
Wet Bench Flexcorr 1 wbflexcorr-1	Flexible	SNF Cleanroom Paul G Allen L107	Metals Al Au Cr Si SiO₂ Resist	GaAs Si3N4 Ti W
Xactix Xenon Difluoride Etcher xactix	All	SNF Cleanroom Paul G Allen L107	Ge Si SiGe

Projects

Materials

Silicon

Equipment Tabs