Graphene CVD Growth |
Aixtron Black Magic graphene CVD furnace aixtron-graphene |
|
Flexible |
SNF Exfab Paul G Allen L119 Año Nuevo |
Low Pressure (LP) CVD |
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly |
LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon, Silicon-Germanium.
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Flexible |
SNF Cleanroom Paul G Allen L107 |
Low Pressure (LP) CVD |
Tystar Bank 3 Tube 12 Poly B3T12 Clean Poly |
LPCVD of Poly silicon, Amorphous Silicon, Doped Silicon.
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Clean |
SNF Cleanroom Paul G Allen L107 |
Low Pressure (LP) CVD |
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride |
LPCVD of Silicon Nitride, Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.
|
Clean |
SNF Cleanroom Paul G Allen L107 |
Low Pressure (LP) CVD |
Tystar Bank 2 Tube 7 Nitride B2T7 Clean Nitride |
LPCVD of Stoichiometric silicon nitride, low-stress silicon nitride, Silicon Oxy Nitride.
|
Clean |
SNF Cleanroom Paul G Allen L107 |
Low Pressure (LP) CVD |
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO |
LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.
|
Flexible |
SNF Cleanroom Paul G Allen L107 |
Low Pressure (LP) CVD |
Tystar Bank 3 Tube 11 TEOS B3T11 Clean TEOS |
LPCVD of TEOS Oxide.
|
Clean |
SNF Cleanroom Paul G Allen L107 |
Low Pressure (LP) CVD |
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO |
LPCVD of Low Temperatur Oxide, PSG, BSG, BPSG.
|
Clean |
SNF Cleanroom Paul G Allen L107 |
Carbon Nanotube CVD Growth |
First Nano carbon nanotube CVD furnace cvd-nanotube |
|
Flexible |
SNF Exfab Paul G Allen L119 Año Nuevo |
EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD |
AMAT Centurion Epitaxial System epi2 |
Deposit epitaxial and polycrystalline silicon, germanium and silicon-germanium films.
|
Clean |
SNF Cleanroom Paul G Allen L107 |
Metal-Organic (MO) CVD |
Aixtron MOCVD - III-V system aix200 |
|
Flexible |
SNF MOCVD Paul G Allen 213XA |
Metal-Organic (MO) CVD |
Aixtron MOCVD - III-N system aix-ccs |
Aixtron MOCVD for III-N semiconductors: InN, GaN, AlN, InGaN, InAlN, AlGaN, InGaAlN. Aix-ccs is a vertical metal organic chemical vapor deposition (MOCVD) system.
|
Clean (MOCVD) |
SNF MOCVD Paul G Allen 213XA |
Plasma Enhanced (PE) CVD |
PlasmaTherm Versaline HDP CVD System hdpcvd |
High Density Plasma Enhanced Chemical Vapor Deposition (HD PECVD) system is used to deposit silicon dioxide, silicon nitride and amorphous silicon.
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All |
SNF Cleanroom Paul G Allen L107 |
Plasma Enhanced (PE) CVD |
PlasmaTherm Shuttlelock PECVD System ccp-dep |
The Plasma-Therm Shuttlelock PECVD (CCP-Dep) system is used for depositing low-stress silicon nitride, silicon dioxide, amorphous and silicon carbide, and silicon oxynitride layers on 4 inch wafers.
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All |
SNF Cleanroom Paul G Allen L107 |