Chemical Formula:
SiGe
Stanford Nanofabrication Facility
Lab User Guide
Equipment Tables
| Equipment name & NEMO ID | Technique | Cleaning Required | Cleanliness | Material Thickness Range | Materials Lab Supplied | Resist | Process Temperature Range | Gases | Substrate Size | Substrate Type | Maximum Load |
|---|---|---|---|---|---|---|---|---|---|---|---|
|
SVG Resist Coat Track 2 svgcoat2 |
"All" | 25 4 inch wafers | |||||||||
|
Tystar Bank 1 Tube 1 Anneal B1T1 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
100 | |||||||
|
Tystar Bank 1 Tube 2 B1T2 Flexible Oxide |
Flexible |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
100 | |||||||
|
Tystar Bank 1 Tube 3 Poly B1T3 Flexible Poly |
Flexible |
25.00 Å -
2.00 μm
|
420 °C - 630 °C
|
100 | |||||||
|
Tystar Bank 1 Tube 4 LTO B1T4 Flexible LTO |
Flexible |
25.00 Å -
2.00 μm
|
300 °C - 500 °C
|
100 | |||||||
|
Tystar Bank 2 Tube 5 B2T5 Clean Anneal |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
100 | ||||||
|
Tystar Bank 2 Tube 6 B2T6 Clean Oxide |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
400 °C - 1100 °C
|
100 | ||||||
|
Tystar Bank 2 Tube 7 Nitride B2T7 Flexible Nitride |
Flexible |
25.00 Å -
2.00 μm
|
420 °C - 800 °C
|
50 | |||||||
|
Tystar Bank 2 Tube 8 LTO B2T8 Clean LTO |
Clean |
25.00 Å -
2.00 μm
|
300 °C - 500 °C
|
100 | |||||||
|
Tystar Bank 3 Tube 10 Nitride B3T10 Clean Nitride |
Pre-Diffusion Clean | Clean |
25.00 Å -
2.00 μm
|
420 °C - 800 °C
|
50 |