ExFab: L104 Stinson

Following is a list of tools located in this lab space (room).

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Exposure Wavelength	Resist	Developer	Process Temperature Range	Chemicals	Sample Size Limits	Substrate Size	Substrate Type	Maximum Load
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing	Flexible				AZ 1:1 MF-26A developer				Pieces 2" 3" 4" 6" 8" 12" Cones Disks Other
Ex Fab Solvent Wet Bench wbexfab_solv	Cleaning > Solvent Cleaning Patterning > Metal Lift-off Wet Chemical Processing	Flexible						Solvents		Pieces 2" 3" 4" 6" 8" Other
Finetech Lambda flipchipbonder	Bonding	Flexible					°C - 400 °C			Pieces 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge)	1
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	"All"			Resists Shipley 3612 resist SPR220-3 resist SPR220-7					Pieces 2" 3" 4"		1 piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	"All"		405 nm						Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Heidelberg3 heidelberg3	Photolithography > Exposure > Direct Write	"All"								Pieces 2" 3" 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	1
HMDS Vapor Prime Oven, YES2 yes2	Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	"All"				[(CH₃)₃Si]₂NH	150 ºC					25
Hummer V Sputter Coater hummer	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Flexible
Keyence Digital Microscope VHX-6000 keyence	Characterization > Surface Analysis > Microscopy	"All"								Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)
Nanoscribe Photonics GT nanoscribe	Patterning 3D Printing	Flexible										1
Profilometer Alphastep 500 alphastep	Characterization > Surface Analysis > Profilometer > Step Profile	Flexible								Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1
Profilometer AlphaStep D-300 alphastep2	Characterization > Surface Analysis > Profilometer > Step Profile	Flexible								Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy > Scanning Electron Microscopy (SEM)	"All"	0.00 mm - 35.00 mm						6 in wafer	Pieces 2" 3" 4" 6" Disks	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Lithium Niobate (LiNb)	one