ExFab: Cleanroom

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Exposure Wavelength	Process Temperature Range	Gases	Substrate Size	Substrate Type	Maximum Load
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti				Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Germanium (Ge) Other (ProMCom approval required) (Various)	4"x3 or 6"x1 wafers or pieces
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	"All"			375 nm			Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb)	1
Lesker2 Sputter lesker2-sputter	Deposition > Physical Vapor Deposition (PVD) > Sputtering	Semiclean	1.00 μm	Ag Al AlSi Cr Ge Pd Ru Sc Si SiO₂ Sn Ta Ti TiN W Alumina ITO Moly		°C - 800 °C	Ar N₂ O₂	Pieces 2" 3" 4" 6"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	one 4 inch wafer, one 6 inch wafer
Nanospec 3 nanospec3	Characterization > Reflectometry	"All"						Pieces 2" 3" 4" 6"
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Optical Profilometer Characterization > Surface Analysis > Profilometer > Interferometry	"All"						Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs)	1