Flexible

The "Flexible" cleanliness group is part of the SNF/ExFab contamination policy.

The following is a list of equipment that fall into the "Flexible" category.

Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
CytoViva HSI cytoviva	Characterization	Flexible
DISCO Backgrinder disco-backgrind	Machining	Flexible
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw	Flexible							Pieces 2" 3" 4" 6" 8"	Silicon (Si) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V)	1x4", 1x6" or 1x8" wafer, or pieces
Epilog Fusion M2 Laser Cutter lasercutter	Machining > Laser Cutting	Flexible
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing	Flexible			AZ 1:1 MF-26A developer				Pieces 2" 3" 4" 6" 8" 12" Cones Disks Other
Ex Fab Solvent Wet Bench wbexfab_solv	Cleaning > Solvent Cleaning Patterning > Metal Lift-off Wet Chemical Processing	Flexible					Solvents		Pieces 2" 3" 4" 6" 8" Other
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia		24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania		24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	Silicon (Si) Silicon Germanium (SiGe) III-V (III-V)
Finetech Lambda flipchipbonder	Bonding	Flexible				°C - 400 °C			Pieces 4"	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge)	1
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth	Flexible		CNT		800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	Silicon (Si) Quartz (SiO2)	1x4" wafer or multiple pieces

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