Skip to content Skip to navigation

III-N materials

Chemical Formula: 
III-N materials

A III-N semiconductor is an alloy, containing the N element and elements from groups III in the periodic table. They can be produced using different deposition techniques like MOCVD and MBE.

Equipment Tabs

Deposition Equipment
Partial words okay.
Deposition Equipment
Equipment name & Badger ID Cleanliness Location Material Thickness Range Approved Materials supplied by Lab
Aixtron MOCVD - III-N system
aix-ccs
SNF MOCVD Paul G Allen 213XA
0.00 - 5.00 μm
Projects
White Paper: Introduction to the Green Gap Project: InGaN-GaN Multiple Quantum Wells for Green LEDs on Si -- (Nano Nugget)
Community Service Extension Request: P-GaN/AlGAN/GaN E-mode HEMT -- (Report)
Community Service P-GaN/AlGAN/GaN E-mode HEMT Project Proposal -- (Report)
Community Service Project P-GaN/AlGAN/GaN E-mode HEMT- Final Report -- (Report)
MOCVD Growth Calibration for GaN LED on Silicon- Final Report -- (Report)
MOCVD Regrown Ohmic Contacts to AlGaN/GaN Heterostructures- Final Report -- (Report)
MOCVD​ ​of​ ​InAlN/GaN​ ​on​ ​Si​ ​Heterostructures​ ​for High-Temperature​ ​High-Electron-Mobility​ ​Transistors (HEMTs)- Final Report -- (Report)
MOCVD Growth Calibration for GaN LED on Silicon- Final Presentation -- (Presentation)
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMTs)- Final Presentation -- (Presentation)
Community Service P-GaN/AlGAN/GaN E-mode HEMT
Improve the performance of MOCVD grown GaN-on-Si HEMT structure
MOCVD Growth Calibration for GaN LED on Silicon
MOCVD of InAlN/GaN on Si Heterostructures for High-Temperature High-Electron-Mobility Transistors (HEMT)
Subscribe to