Diamond | Stanford Nanofabrication Facility

Chemical Formula:

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched
MRC Reactive Ion Etcher mrc	Flexible	SNF Paul G Allen L107 Cleanroom	Metal oxides Metals Metals or metal compounds with volatile byproducts Metals or metal compounds without volatile byproducts Au Ni poly(p-xylylene) Pt Si Si3N4 SiO₂ Ti Various 2D Materials Various Dielectrics Various polymers PI Resist	Al AlAs AlGaAs AlGaN AlInP AlN AlSi BiFeO₃ C C C Co CoFeB Cr Cu Er Fe Ga₂O₃ GaAs GaN GaP GaPN Ge Hf HfN III-N materials III-V materials In In₂O₃ InAlN InAs InGaAlN InGaAs InGaAsN InGaN InGaP InN InP InPN InSb Ir LaB₆ LiNb Nb Ni_xO_y NiSi Pd Ru Sc SiC SiGe SiO SiON Sn SnO₂ SrO SrRuO Ta Ta₂O₅ TaN TiN V Various C-based Various polymers W WO₃ WSi₂ Y ZnO₃ Zr ZrY Alumina AZO Hafnia ITO LLZO Moly Moly Oxide Poly Silicon Ti Tungsten Titania YSZ Zirconia
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Paul G Allen L107 Cleanroom	Si3N4 SiC SiO₂ PI	C
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Flexible	SNF Paul G Allen L107 Cleanroom	III-V materials Various 2D Materials	C Nb Si Si3N4 SiO₂ SiON Poly Silicon
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Paul G Allen L107 Cleanroom	C Si3N4 SiC SiO₂	Various C-based