Tetrafluoromethane | Stanford Nanofabrication Facility

Chemical Formula:

CF₄

Etch Equipment
Equipment name & NEMO ID	Cleanliness	Location	Primary Materials Etched	Other Materials Etched	Gases
Lam Research TCP 9400 Poly Etcher lampoly	Clean Semiclean	SNF Paul G Allen L107 Cleanroom	Si	Ge SiGe	80% He/ 20%O₂ C₂F₆ CF₄ Cl₂ HBr He N₂ O₂
Oxford Dielectric Etcher oxford-rie	Flexible	SNF Paul G Allen L107 Cleanroom	Si3N4 SiC SiO₂ PI	C	Ar CF₄ CHF₃ N₂ O₂ SF₆
Oxford Plasma Pro ICP-RIE Ox-gen	Flexible	SNF Paul G Allen L107 Cleanroom			Ar BCl₃ CF₄ CH₄ Cl₂ H₂ N₂ O₂ SF₆
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Clean	SNF Paul G Allen L107 Cleanroom	Si Si3N4 SiO₂ Poly Silicon		Ar C₄F₈ CF₄ CHF₃ N₂ NF₃ O₂ SF₆
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Flexible	SNF Paul G Allen L107 Cleanroom	C Si3N4 SiC SiO₂	Various C-based	Ar C₄F₈ CF₄ CHF₃ H₂ He N₂ O₂
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Flexible	SNF Paul G Allen L107 Cleanroom	Metals or metal compounds with volatile byproducts Al	GaN	Ar BCl₃ CF₄ CH₄ Cl₂ N₂ O₂ SF₆
Samco PC300 Plasma Etch System samco	Flexible	SNF Paul G Allen L107 Cleanroom	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI	CF₄ O₂ SF₆

Deposition Equipment
Equipment name & NEMO ID	Cleanliness	Location	Material Thickness Range	Approved Materials supplied by Lab
Oxford Plasma Pro PECVD Ox-PECVD	Semiclean Flexible	SNF Paul G Allen L107 Cleanroom	100.00 Å - 4.00 μm	Si Si3N4 SiC SiO₂ SiON