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Equipment Tables

Equipment name & NEMO ID	Technique	Cleanliness	Primary Materials Etched	Other Materials Etched	Materials Lab Supplied	Developer	Process Temperature Range	Chemicals	Gases	Accessories Available	Substrate Size	Substrate Type	Maximum Load
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing	Flexible				AZ 1:1 MF-26A developer					Pieces 2" 3" 4" 6" 8" 12" Cones Disks Other
Ex Fab Solvent Wet Bench wbexfab_solv	Cleaning > Solvent Cleaning Patterning > Metal Lift-off Wet Chemical Processing	Flexible						Solvents			Pieces 2" 3" 4" 6" 8" Other
Malvern Dynamic Light Scattering (DLS) Zetasizer malvern-dls	Characterization > Dynamic Light Scattering	Flexible								Integrating Sphere	Pieces Other
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Deposition	Flexible			poly(p-xylylene)						Pieces 2" 3" 4" 6" 8" Cones Disks Other	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)
Samco PC300 Plasma Etch System samco	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE) Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal	Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI			20 ºC		CF₄ O₂ SF₆		Pieces 2" 3" 4" 6" 8" Other	Silicon (Si) Silicon Germanium (SiGe) Quartz (SiO2) Sapphire (Al₂O₃) Glass (SiO₂) Germanium (Ge) Silicon Carbide (SiC) Gallium Nitride (GaN) III-V (III-V) Gallium Arsenide (GaAs) Polymer (Various) Carbon Polymer Based (Various) Lithium Niobate (LiNb) Other (ProMCom approval required) (Various)	Four 4" wafers or two 6" wafers and one 8" wafer