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Stanford Nanofabrication Facility
Lab User Guide

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SNF: Atomic Layer Deposition

Equipment Tables

  • Summary
  • Specifications
Equipment name & NEMO ID Technique Cleanliness Material Thickness Range Materials Lab Supplied Process Temperature Range Gases Substrate Size Substrate Type
Fiji 1 ALD
fiji1
  • Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD
Semiclean
1.00 Å - 50.00 nm
  • Metal oxides
  • HfN
  • Pt
  • Ru
  • SiO2
  • Ta2O5
  • TaN
  • TiN
  • Various Dielectrics
  • Alumina
  • Hafnia
  • Titania
  • Zirconia
24 °C - 350 °C
  • Ar
  • H2
  • N2
  • NH3
  • O2
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • 8"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

Fiji 2 ALD
fiji2
  • Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD
Flexible
1.00 Å - 50.00 nm
  • Metal oxides
  • Ga2O3
  • HfN
  • In2O3
  • NixOy
  • Pt
  • Ru
  • Si3N4
  • SiO2
  • SnO2
  • SrO
  • Ta2O5
  • TiN
  • Various Dielectrics
  • Alumina
  • Hafnia
  • ITO
  • Moly Oxide
  • Titania
  • Zirconia
24 °C - 350 °C
  • Ar
  • H2
  • N2
  • O2
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • 8"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Silicon Carbide (SiC)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Polymer (Various)

  • Carbon Polymer Based (Various)

  • Lithium Niobate (LiNb)

  • Other (ProMCom approval required) (Various)

Fiji 3 ALD
fiji3
  • Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD
Flexible
1.00 Å - 50.00 nm
  • SiO2
  • Various Dielectrics
  • Alumina
  • Hafnia
  • Titania
24 °C - 350 °C
  • Ar
  • H2
  • N2
  • NH3
  • O2
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • 8"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • III-V (III-V)

MVD
mvd
  • Deposition > Atomic Layer Deposition (ALD) > Thermal ALD
Flexible
1.00 Å - 50.00 nm
  • C9H23NO3Si
  • Various Dielectrics
  • Alumina
  • DETA
  • Hafnia
  • ODS
  • SAMS
24 °C - 150 °C
  • Ar
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • 8"
Savannah ALD
savannah
  • Deposition > Atomic Layer Deposition (ALD) > Thermal ALD
Flexible
1.00 Å - 50.00 nm
  • Metal oxides
  • Ga2O3
  • SnO2
  • Various Dielectrics
  • ZnO3
  • Alumina
  • AZO
  • Hafnia
  • Titania
  • Zirconia
24 °C - 250 °C
  • N2
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
  • 8"
  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Silicon Carbide (SiC)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Polymer (Various)

  • Carbon Polymer Based (Various)

  • Lithium Niobate (LiNb)

  • Other (ProMCom approval required) (Various)

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