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Stanford Nanofabrication Facility

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SNF: Photolithography

Equipment Tables

  • Summary
  • Specifications
Equipment name & NEMO ID Technique Cleanliness Minimum Resolution Exposure Wavelength Mask Size Max Exposure Area Resist Developer Process Temperature Range Chemicals Substrate Size Substrate Type Maximum Load
ASML PAS 5500/60 i-line Stepper
asml
  • Photolithography > Exposure > Stepper
"All"
365 nm 5 inch
  • 4"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)
EVG 101 Spray Coater
evgspraycoat
  • Photolithography > Resist coat > Resist Spray Coat (manual)
"All"
  • Resists
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

 1
Headway Manual Resist Spinner
headway2
  • Photolithography > Resist coat > Resist Coat (manual)
"All"
  • AZ5214IR
  • Shipley 3612 resist
  • SPR 955 CM-.7 resist
  • SPR220-3 resist
  • SPR220-7
  • (C5O2H8)n
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Silicon Carbide (SiC)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

 one piece or wafer
HMDS Vapor Prime Oven, YES
yes
  • Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)
  • Photolithography > Wafer preparation before resist > Singe
"All"
150 ºC
  • [(CH3)3Si]2NH
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)
Karl Suss MA-6 Contact Aligner
karlsuss
  • Photolithography > Exposure > Contact Aligner
"All"
365 nm 4 inch, 5 inch, 7 inch 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

  • Polymer (Various)
Karl Suss MA-6 Contact Aligner
karlsuss2
  • Photolithography > Exposure > Contact Aligner
"All"
365 nm or 405 nm 4 inch, 5 inch, 7 inch 5 inch mask = 4 inch, 7 inch mask = 6 inch, 4 inch mask = 3 inch
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

  • Polymer (Various)
Laurell Manual Resist Spinner
laurell-R
  • Photolithography > Resist coat > Resist Coat (manual)
"All"
  • Resists
  • SU-8
  • LOL
  • (C5O2H8)n
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"
Oven (White)
white-oven
  • Photolithography > Resist Bake > Oven Bake
Flexible
0 °C - 200 °C
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)
Oven 110°C post-bake
oven110
  • Photolithography > Resist Bake > Oven Bake > Resist Post Bake
"All"
110 ºC
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Silicon Carbide (SiC)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)
Oven 90°C prebake
oven90
  • Photolithography > Resist Bake > Oven Bake > Resist Prebake
"All"
90 ºC
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)
Oven BlueM 200°C to 430°C
bluem
  • Photolithography > Resist Bake > Oven Bake
Flexible
0 °C - 430 °C
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

  • Polymer (Various)
SVG Develop Track 1
svgdev
  • Photolithography > Resist Develop > Resist Develop (automatic)
"All"
  • MF-26A developer
  • 4"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

 25 4 inch wafers
SVG Develop Track 2
svgdev2
  • Photolithography > Resist Develop > Resist Develop (automatic)
"All"
  • MF-26A developer
  • 4"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

 25 4 inch wafers
SVG Resist Coat Track 1
svgcoat
  • Photolithography > Resist coat > Resist Coat (automatic)
"All"
  • Shipley 3612 resist
  • SPR220-3 resist
  • SPR220-7
  • 4"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

 25 4 inch wafers
SVG Resist Coat Track 2
svgcoat2
  • Photolithography > Resist coat > Resist Coat (automatic)
"All"
  • AZ5214IR
  • Shipley 3612 resist
  • SPR 955 CM-.7 resist
  • 4"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)

 25 4 inch wafers
Ultraviolet Photoresist Cure
uvcure
  • Photolithography > Resist Bake > Oven Bake > Resist UV Cure
"All" 254 nm
Wet Bench Solvent Lithography
lithosolv
  • Cleaning > Solvent Cleaning
  • Wet Chemical Processing
Flexible
  • Solvents
  • Pieces
  • 2"
  • 3"
  • 4"
  • 6"

  • Silicon (Si)

  • Silicon Germanium (SiGe)

  • Quartz (SiO2)

  • Sapphire (Al2O3)

  • Glass (SiO2)

  • Germanium (Ge)

  • Gallium Nitride (GaN)

  • III-V (III-V)

  • Gallium Arsenide (GaAs)
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