Skip to content
Skip to navigation
Stanford Nanofabrication Facility
Lab User Guide
Navigation menu
Guide Main Menu
SNF Home
Guide Home
Guide Home Overview
Lab Spaces
Techniques
Overview
Processing Techniques
Projects
Nano Nuggets
Processes
Runsheets
Safety & Policies
Overview
SNF Lab Manual
Safety Training
SDS
Mavericks (ExFab Room 155) Policies
Prescription Safety Glasses
Training
Overview/Equipment List
Upcoming Training, link to NEMO
Training Course Online
Training Shadowing Form
Training Videos
All Litho class
Materials
Overview
Chemicals & Materials
Cleanliness Groups
New Process or Material Requests (PROM)
Chemicals List
Materials List
Gases List
Useful Links
Run NEMO (login required)
NEMO User Guide
Events
External Links
Wafer Dopant and Resistivity Specs
Face shield cleaning using steamer
Tool Monitoring
People
Staff List
For Emergencies
Technical Liaisons
Consultants
Equipment
Equipment Name Table
Characterization (link to Processing Techniques)
CVD (link to Processing Techniques)
Doping (link to Processing Techniques)
Dry Etch (link to Processing Techniques)
Metallization (link to Processing Techniques)
Oxidation and Annealing (link to Processing Techniques)
Photolithography (link to Processing Techniques)
Wet Chemical Processing (link to Processing Techniques)
Materials
Overview
Chemicals & Materials
Cleanliness Groups
New Process or Material Requests (PROM)
Chemicals List
Materials List
Gases List
Silane
Chemical Formula:
SiH
4
Gases Equipment Tabs
Etch Equipment Table
Equipment name or Badger ID
Partial words okay.
No equipment matches all of the filter criteria you have set above.
Anneal/Oxidation Equipment Table
Equipment name or Badger ID
Partial words okay.
Deposition Equipment
Equipment name & Badger ID
Cleanliness
Location
Material Thickness Range
Approved Materials supplied by Lab
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
SNF MOCVD Paul G Allen 213XA
0.00
-
5.00 μm
AlGaN
AlN
GaN
III-N materials
InAlN
InGaAlN
InGaN
InN
Aixtron MOCVD - III-V system
aix200
Flexible
SNF MOCVD Paul G Allen 213XA
0.00
-
5.00 μm
AlAs
AlGaAs
GaAs
GaP
GaPN
III-V materials
InAs
InGaAs
InGaAsN
AMAT Centurion Epitaxial System
epi2
Clean
SNF Cleanroom Paul G Allen L107
50.00 Å
-
3.00 μm
Ge
Si
SiGe
PlasmaTherm Versaline HDP CVD System
hdpcvd
All
SNF Cleanroom Paul G Allen L107
500.00 Å
-
4.00 μm
Si
Si3N4
SiC
SiO
2
SiON
Tystar Bank 1 Tube 3 Poly
B1T3 Flexible Poly
Flexible
SNF Cleanroom Paul G Allen L107
25.00 Å
-
2.00 μm
Ge
Si
Si
SiGe
Tystar Bank 1 Tube 4 LTO
B1T4 Flexible LTO
Flexible
SNF Cleanroom Paul G Allen L107
25.00 Å
-
2.00 μm
SiO
2
Tystar Bank 2 Tube 8 LTO
B2T8 Clean LTO
Clean
SNF Cleanroom Paul G Allen L107
25.00 Å
-
2.00 μm
SiO
2
Tystar Bank 3 Tube 12 Poly
B3T12 Clean Poly
Clean
SNF Cleanroom Paul G Allen L107
25.00 Å
-
2.00 μm
Si
Si