3 inch wafer

Short Name:

The following is a list of equipment where 3 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Aixtron Black Magic graphene CVD furnace aixtron-graphene	CVD graphene furnace Aixtron Black Magic training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo
AJA Evaporator aja-evap	Evaporator AJA training	Flexible	SNF Exfab Paul G Allen 155A Venice	For more than 300nm deposition, please contact Graham Ewing<grahamj.ewing@stanford.edu> in advance
AJA2 Evaporator aja2-evap	Evaporator AJA2 Training	Flexible	SNF Paul G Allen L107 Cleanroom	For more than 300nm deposition, please contact Gabe Catalano <gcatalano@stanford.edu> in advance
Asylum AFM afm-asylum	AFM Asylum Training	Flexible	SNF Exfab Paul G Allen 151 Ocean
CHA Solutions II Evaporator cha-evap	Evaporator CHA Training	Flexible	SNF Paul G Allen L107 Cleanroom	For more than 300nm deposition, please contact Neel Mehta <nmehta26@stanford.edu> in advance
Critical Point Dryer Tousimis Automegasamdri-936 cpd	Critical Point Dryer Training	Flexible	SNF Paul G Allen L107 Cleanroom	CO2 drying after release of micromachined devices
DISCO Wafer Saw DISCO wafersaw	Wafersaw DISCO training	Flexible	SNF Exfab Paul G Allen 159 Capitola
EVG 101 Spray Coater evgspraycoat	Spray Coater EVG 101 Training	"All"	SNF Paul G Allen L107 Cleanroom	Spray coating of resists
Ex Fab Develop Wet Bench wbexfab_dev	WbExfab_Dev Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	Manual development of resist in beakers. SNF approved developers only. No solvents!
Ex Fab Solvent Wet Bench wbexfab_solv	WbExfab_Solv Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Fiji 1 ALD fiji1	ALD Fiji 1 and 2 Training	Semiclean	SNF Paul G Allen L107 Cleanroom
Fiji 2 ALD fiji2	ALD Fiji 1 and 2 Training	Flexible	SNF Paul G Allen L107 Cleanroom
Fiji 3 ALD fiji3	ALD Fiji 3 Training	Flexible	SNF Paul G Allen L107 Cleanroom	Restricted to non-conductive films only
First Nano carbon nanotube CVD furnace cvd-nanotube	cvd-nanotube training	Flexible	SNF Exfab Paul G Allen L119 Año Nuevo	Aligned single-walled carbon nanotube growth with ST-cut quartz substrates (available from SNF stockroom);1-15 single-walled carbon nanotubes per micron density
Flexus 2320 Stress Tester stresstest	Stress Tester Flexus 2320 Training	"All"	SNF Paul G Allen L107 Cleanroom
Headway 3 Manual Resist Spinner headway3	Resist Coat (manual) Headway 3 Training	"All"	SNF Exfab Paul G Allen 104 Stinson
Headway Manual Resist Spinner headway2	Resist Coat (manual) Headway Manual Training	"All"	SNF Paul G Allen L107 Cleanroom	Adjustable spin speeds, spin time. SNF-acceptable resists or polymers. Ebeam resists
Heidelberg MLA 150 heidelberg	Heidelberg Training	"All"	SNF Exfab Paul G Allen 104 Stinson	Direct Write
Heidelberg MLA 150 - 2 heidelberg2	Heidelberg Training	"All"	SNF Paul G Allen L107 Cleanroom	Direct Write
HMDS Vapor Prime Oven, YES yes	YES Prime Oven Training	"All"	SNF Paul G Allen L107 Cleanroom	Two programs: Singe and HMDS prime or Singe only. No Resist allowed!

Pages

Equipment name & NEMO ID	Technique	Cleanliness	Material Thickness Range	Materials Lab Supplied	Exposure Wavelength	Resist	Developer	Process Temperature Range	Chemicals	Gases	Substrate Size	Substrate Type	Maximum Load
Aixtron Black Magic graphene CVD furnace aixtron-graphene	Deposition > Chemical Vapor Deposition (CVD) > Graphene CVD Growth	Flexible		C				800 °C - 1100 °C		78% N₂, 21% O₂, ~1% Ar CH₄ H₂	Pieces 2" 3" 4"	(Si) , (Various)	1x4" wafer or Copper/Nickel foil
AJA Evaporator aja-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Co Cr Cu Fe Ge Hf Ni Ni_xO_y Pd Pt SiO₂ Ti Titania							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various)	4"x3 or 6"x1 wafers or pieces
AJA2 Evaporator aja2-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x3 or 6"x1 wafers or pieces
Asylum AFM afm-asylum	Characterization > Surface Analysis > Profilometer > Atomic Force Microscopy (AFM)	Flexible									Pieces 2" 3"
CHA Solutions II Evaporator cha-evap	Deposition > Physical Vapor Deposition (PVD) > Evaporation	Flexible	0.00 - 300.00 nm	Ag Al Au Cr Cu Ni Pd Pt Ti							Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (Ge) , (Various)	4"x15 or 6"x3 wafers or pieces
Critical Point Dryer Tousimis Automegasamdri-936 cpd	Drying > CO2 Drying Wet Chemical Processing	Flexible							CO₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)
DISCO Wafer Saw DISCO wafersaw	Machining > Wafer Saw	Flexible									Pieces 2" 3" 4" 6" 8"	(Si) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V)	1x4", 1x6" or 1x8" wafer, or pieces
EVG 101 Spray Coater evgspraycoat	Photolithography > Resist coat > Resist Spray Coat (manual)	"All"				Resists					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂)	1
Ex Fab Develop Wet Bench wbexfab_dev	Photolithography > Resist Develop > Resist Develop (manual) Wet Chemical Processing	Flexible					AZ 1:1 MF-26A developer				Pieces 2" 3" 4" 6" 8" 12" Cones Disks Other
Ex Fab Solvent Wet Bench wbexfab_solv	Patterning > Metal Lift-off Cleaning > Solvent Cleaning Wet Chemical Processing	Flexible							Solvents		Pieces 2" 3" 4" 6" 8" Other
Fiji 1 ALD fiji1	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Semiclean	1.00 Å - 50.00 nm	Metal oxides HfN Pt Ru SiO₂ Ta₂O₅ TaN TiN Various Dielectrics Alumina Hafnia Titania Zirconia				24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2)
Fiji 2 ALD fiji2	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ HfN In₂O₃ Ni_xO_y Pt Ru Si3N4 SiO₂ SnO₂ SrO Ta₂O₅ TiN Various Dielectrics Alumina Hafnia ITO Moly Oxide Titania Zirconia				24 °C - 350 °C		Ar H₂ N₂ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
Fiji 3 ALD fiji3	Deposition > Atomic Layer Deposition (ALD) > Plasma Enhanced (PE) ALD	Flexible	1.00 Å - 50.00 nm	SiO₂ Various Dielectrics Alumina Hafnia Titania				24 °C - 350 °C		Ar H₂ N₂ NH₃ O₂	Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (III-V)
First Nano carbon nanotube CVD furnace cvd-nanotube	Deposition > Chemical Vapor Deposition (CVD) > Carbon Nanotube CVD Growth	Flexible		CNT				800 °C - 1100 °C		Ar C₂H₅OH CH₄ H₂ O₂	Pieces 2" 3" 4"	(Si) , (SiO2)	1x4" wafer or multiple pieces
Flexus 2320 Stress Tester stresstest	Characterization > Film Stress Measurement	"All"									3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Headway 3 Manual Resist Spinner headway3	Photolithography > Resist coat > Resist Coat (manual)	"All"				Resists Shipley 3612 resist SPR220-3 resist SPR220-7					Pieces 2" 3" 4"		1 piece or wafer
Headway Manual Resist Spinner headway2	Photolithography > Resist coat > Resist Coat (manual)	"All"				AZ5214IR Shipley 3612 resist SPR 955 CM-.7 resist SPR220-3 resist SPR220-7 (C₅O₂H₈)_n					Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	one piece or wafer
Heidelberg MLA 150 heidelberg	Photolithography > Exposure > Direct Write	"All"			405 nm						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Heidelberg MLA 150 - 2 heidelberg2	Photolithography > Exposure > Direct Write	"All"			375 nm						Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
HMDS Vapor Prime Oven, YES yes	Photolithography > Wafer preparation before resist > Singe Photolithography > Wafer preparation before resist > Wafer Prime (HMDS)	"All"						150 ºC	[(CH₃)₃Si]₂NH		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)