3 inch wafer

Short Name:

The following is a list of equipment where 3 inch round substrates are allowed.

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Plasmaetch PE-50 plasma-etch	Plasmaetch PE-50 Training	Flexible	SNF Exfab Paul G Allen 155 Mavericks	Low power, high pressure plasma; low bias, minimal damage. Often used for surface treatment At SNF - nSiL lab
Profilometer Alphastep 500 alphastep	Alphastep 500 Profilometer Training	Flexible	SNF Exfab Paul G Allen 104 Stinson	500Å to 300µm
Profilometer AlphaStep D-300 alphastep2	AlphaStep2 Training	Flexible	SNF Exfab Paul G Allen 104 Stinson
Prometrix Resistivity Mapping System prometrix	Prometrix Training	All	SNF Cleanroom Paul G Allen L107	3 Probe Heads for different cleanliness groups.
RTA AllWin 610 aw610_l	AllWin 610 RTA Training	Clean	SNF Cleanroom Paul G Allen L107
RTA AllWin 610 aw610_r	AllWin 610 RTA Training	Flexible	SNF Cleanroom Paul G Allen L107
Samco PC300 Plasma Etch System samco	Samco Training	Flexible	SNF Cleanroom Paul G Allen L107
Savannah ALD savannah	ALD Savannah Training	Flexible	SNF Cleanroom Paul G Allen L107
SEM -Zeiss Merlin sem-merlin	SEM-Merlin Training	All	SNF Exfab Paul G Allen 104 Stinson
SEM: FEI Nova NanoSEM 450	SEM: FEI Nova NanoSEM 450 Training	All	SNSF NPC Cleanroom Spilker suite006	The FEI Nova NanoSEM will be decommissioned in the week of February 3rd 2025
Sensofar S-neox s-neox	Sensofar S-neox Training	All	SNF Cleanroom Paul G Allen L107	non contact 3D optical profiling
Sinton Lifetime Tester sinton-lifetime-tester	Sinton Lifetime Tester Training	Flexible	SNF Exfab Paul G Allen 151 Ocean
SPTS uetch vapor etch uetch	SPTS uetch vapor etch Training	All	SNF Cleanroom Paul G Allen L107	Pieces need a carrier wafer; Isotropic Etching
Tencor P2 Profilometer p2	Tencor P2 Profilometer Training	Clean, Semiclean	SNF Cleanroom Paul G Allen L107	Step height measurement range 500 Å to 80 µm
Wet Bench Clean 1 wbclean-1	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha.
Wet Bench Clean 2 wbclean-2	Wet Bench Clean1and2 Training	Clean	SNF Cleanroom Paul G Allen L107	No resist allowed. Resist should have been removed at the wbclean_res-piranha
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist should have been removed
Wet Bench Clean_res-hf wbclean_res-hf	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist as mask allowed
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Bench Clean Piranha/HF/Phosphoric Training	Clean	SNF Cleanroom Paul G Allen L107	Resist will be removed
Wet Bench CMOS Metal wbclean3	Wet Bench CMOS Metal (wbclean3) Training	Semiclean	SNF Cleanroom Paul G Allen L107	Al, Ti, or W wet etching or oxide etching

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Equipment name & NEMO ID	Technique	Cleaning Required	Cleanliness	Primary Materials Etched	Other Materials Etched	Material Thickness Range	Materials Lab Supplied	Process Temperature Range	Chemicals	Gases	Sample Size Limits	Substrate Size	Substrate Type	Maximum Load
Plasmaetch PE-50 plasma-etch	Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist						78% N₂, 21% O₂, ~1% Ar		Pieces 2" 3" 4" 6"		Multiple
Profilometer Alphastep 500 alphastep	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Profilometer AlphaStep D-300 alphastep2	Characterization > Surface Analysis > Profilometer > Step Profile		Flexible									Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb)	1
Prometrix Resistivity Mapping System prometrix	Characterization > Sheet Resistance Measurement		All									2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
RTA AllWin 610 aw610_l	Annealing & Oxidation > Rapid Thermal Annealing	Pre-Diffusion Clean	Clean					21 °C - 1150 °C		4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)	1 wafer
RTA AllWin 610 aw610_r	Annealing & Oxidation > Rapid Thermal Annealing		Flexible					21 °C - 1150 °C		4% H₂ in N₂ Ar N₂ NH₃ O₂		Pieces 2" 3" 4" 6"	(Si) , (SiGe) , (SiO2)
Samco PC300 Plasma Etch System samco	Cleaning > Resist Removal > Dry Resist Removal > Downstream/Remote Plasma Resist Removal Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Plasma Mode Etching Etching > Dry Etching > Capacitively Coupled Plasma Etching (CCP) > Reactive Ion Etching (RIE)		Flexible	Resist	dimethylpolysiloxane Si Si3N4 SiO₂ SiON Various polymers PI			20 ºC		CF₄ O₂ SF₆		Pieces 2" 3" 4" 6" 8" Other	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (Various) , (Various) , (LiNb) , (Various)	Four 4" wafers or two 6" wafers and one 8" wafer
Savannah ALD savannah	Deposition > Atomic Layer Deposition (ALD) > Thermal ALD		Flexible			1.00 Å - 50.00 nm	Metal oxides Ga₂O₃ SnO₂ Various Dielectrics ZnO₃ Alumina AZO Hafnia Titania Zirconia	24 °C - 250 °C		N₂		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (Various) , (Various) , (LiNb) , (Various)
SEM -Zeiss Merlin sem-merlin	Characterization > Surface Analysis > Microscopy > Scanning Electron Microscopy (SEM)		All			0.00 mm - 35.00 mm					6 in wafer	Pieces 2" 3" 4" 6" Disks	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs) , (LiNb)	one
SEM: FEI Nova NanoSEM 450	Characterization > Surface Analysis > Microscopy > Scanning Electron Microscopy (SEM)		All									Pieces 2" 3" 4"		one
Sensofar S-neox s-neox	Characterization > Surface Analysis > Profilometer > Interferometry Characterization > Surface Analysis > Profilometer > Optical Profilometer		All									Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Sinton Lifetime Tester sinton-lifetime-tester	Characterization > Minority Carrier Characterization		Flexible									Pieces 2" 3" 4" 6"
SPTS uetch vapor etch uetch	Etching > Vapor Etching		All	SiO₂						C₂H₅OH HF vapor		Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (SiC) , (GaN) , (III-V) , (GaAs)	1
Tencor P2 Profilometer p2	Characterization > Surface Analysis > Profilometer > Step Profile		Clean, Semiclean									Pieces 2" 3" 4" 6" 8"	(Si) , (SiGe) , (SiO2) , (Al₂O₃) , (SiO₂) , (Ge) , (GaN) , (III-V) , (GaAs)	1
Wet Bench Clean 1 wbclean-1	Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing Cleaning > Pre-Diffusion Clean		Clean						50:1 HF SC1 SC2			3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean 2 wbclean-2	Cleaning > Pre-Diffusion Clean > Pre-LPCVD or Pre-Metal Clean Wet Chemical Processing Cleaning > Pre-Diffusion Clean		Clean						50:1 HF 6:1 BOE SC1 SC2			3" 4" 6"	(Si) , (SiGe) , (SiO2)	25
Wet Bench Clean_res- hotphos wbclean_res-hotphos	Wet Chemical Processing Etching > Wet Etching > Silicon Nitride Wet Etching		Clean	Si3N4								3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-hf wbclean_res-hf	Wet Chemical Processing Etching > Wet Etching > Silicon Oxide Wet Etching		Clean	SiO₂					20:1 BOE 50:1 HF 6:1 BOE			3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench Clean_res-piranha wbclean_res-piranha	Wet Chemical Processing Cleaning > Resist Removal > Wet Resist Removal Cleaning > Piranha Cleaning		Clean						9:1 Piranha			3" 4" 6"	(Si) , (SiGe) , (SiO2)
Wet Bench CMOS Metal wbclean3	Wet Chemical Processing Etching > Wet Etching > Aluminum and Titanium and Tungsten Wet Etching		Semiclean	Al Ti W					20:1 BOE 50:1 HF 6:1 BOE Al-Etch Ti-Etch W-etch			3" 4" 6"	(Si) , (SiGe) , (SiO2)	25 wafers