This is a summary of the ICP Etchers.
If you would like to see a summary of etchers for a specific material (i.e. SiO2 or poly silicon) please visit the materials page.
Equipment Name | Processing Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Gases | Substrate Size | Maximum Load | Notes |
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Oxford III-V etcher (Ox-35) | Inductively Coupled Plasma Etching (ICP) | Flexible | 1 |
Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8"... |
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Plasma Therm Versaline LL ICP Metal Etcher (PT-MTL) | Inductively Coupled Plasma Etching (ICP) | Flexible | 1 |
Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to... |
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Plasma Therm Versaline LL ICP Deep Silicon Etcher (PT-DSE) | Inductively Coupled Plasma Etching (ICP) | Flexible |
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1 |
Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config;... |
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Lam Research TCP 9400 Poly Etcher (lampoly) | Inductively Coupled Plasma Etching (ICP) | Clean, Semiclean | 25 |
Single wafer etch with auto-loading from a cassette. Equipment originally used for gate etching... |
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Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox) | Inductively Coupled Plasma Etching (ICP) | Flexible | 1 |
Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to... |
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Oxford Plasma Pro ICP-RIE (Ox-gen) | Inductively Coupled Plasma Etching (ICP) | Clean |
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1 |