Equipment name & NEMO ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Developer | Process Temperature Range | Chemicals | Gases | Sample Size Limits | Resolution Notes | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DISCO Wafer Saw DISCO wafersaw |
Flexible |
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1x4", 1x6" or 1x8" wafer, or pieces | ||||||||||||
Ex Fab Develop Wet Bench wbexfab_dev |
Flexible | ||||||||||||||
Ex Fab Solvent Wet Bench wbexfab_solv |
Flexible | ||||||||||||||
Fiji 1 ALD fiji1 |
Semiclean |
1.00 Å -
50.00 nm
|
24 °C - 350 °C
|
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Fiji 2 ALD fiji2 |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 350 °C
|
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|||||||||||
Fiji 3 ALD fiji3 |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 350 °C
|
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Flexus 2320 Stress Tester stresstest |
All |
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1 | ||||||||||||
LEI1500 Contactless Sheet Resistance Mapping eddycurrent |
All | 8 in wafer |
Sensor Transducer Size is 14 mm diameter |
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1 wafer(2" to 8") | ||||||||||
MVD mvd |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 150 °C
|
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PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible |
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Prometrix Resistivity Mapping System prometrix |
All |
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1 | ||||||||||||
Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
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Four 4" wafers or two 6" wafers and one 8" wafer | |||||||||||
Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
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Sensofar S-neox s-neox |
All |
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1 | ||||||||||||
SPTS uetch vapor etch uetch |
All |
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1 | ||||||||||||
Technics Asher technics |
Flexible |
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Four 4" wafers to pieces, one 6" or 8" wafer | ||||||||||||
Tencor P2 Profilometer p2 |
Clean, Semiclean |
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1 | ||||||||||||
Woollam woollam |
All |
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1 |