6 inch wafer

reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter

Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode

Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Å

Bakes wafers with resist after the development, called post-bake.

Convection in N2. Cure. Programmable.

Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching