4 inch wafer

Short Name:

4"

The following is a list of equipment where 4 inch round substrates are allowed.

Equipment Tables

Equipment name & NEMO ID	Training Required & Charges	Cleanliness	Location	Notes
Micromanipulator6000 IV-CV probe station micromanipulator6000	micromanipulator6000 IV-CV probe station Training	"All"	SNF Exfab Paul G Allen 151 Ocean
MRC Reactive Ion Etcher mrc	MRC Reactive Ion Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
MVD mvd	MVD Training	Flexible	SNF Paul G Allen L107 Cleanroom	Reactor located inside glovebox
Nanospec 210XP nanospec2	Nanospec Training	"All"	SNF Exfab Paul G Allen L104 Stinson	Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
Nanospec 3 nanospec3	Nanospec 3 Training	"All"	SNF Paul G Allen L107 Cleanroom
Optomec Printer optomec-printer		Flexible	SNF Exfab Paul G Allen 155A Venice
Oven (White) white-oven	White Oven Training	Flexible	SNF Paul G Allen L107 Cleanroom	For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.
Oven 110°C post-bake oven110	Resist Postbake Oven 110°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers with resist after the development, called post-bake.
Oven 90°C prebake oven90	Resist Prebake Oven 90°C Training	"All"	SNF Paul G Allen L107 Cleanroom	Bakes wafers after resist coating.
Oven BlueM 200°C to 430°C bluem	Blue M Oven Training	Flexible	SNF Paul G Allen L107 Cleanroom	Convection in N2. Cure. Programmable.
Oxford Dielectric Etcher oxford-rie	Oxford Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers
Oxford III-V etcher Ox-35	Oxford III-V etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Metal etching or Metal hard masks are not allowed. 4" wafers; can be adopted to do 6" or 8" wafers; pieces need to be bonded to carrier wafers; Restrictions: III-V materials only.
Oxford Plasma Pro ICP-RIE Ox-gen	Ox-gen etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE ALE Ox-ALE	Oxford Plasma Pro ICP-RIE ALE Training	Flexible	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro ICP-RIE Ox Ox-Ox	Oxford Plasma Pro ICP-RIE Ox Training	Clean	SNF Paul G Allen L107 Cleanroom
Oxford Plasma Pro PECVD Ox-PECVD	Oxford Plasma Pro PECVD Training	Semiclean, Flexible	SNF Paul G Allen L107 Cleanroom
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater	Parylene Coater Training	Flexible	SNF Exfab Paul G Allen 155 Mavericks
Plasma Therm Versaline LL ICP Deep Silicon Etcher PT-DSE	Plasma Therm Versaline LL ICP Deep Silicon Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
Plasma Therm Versaline LL ICP Dielectric Etcher PT-Ox	Plasma Therm Versaline LL ICP Dielectric Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)
Plasma Therm Versaline LL ICP Metal Etcher PT-MTL	Plasma Therm Versaline LL ICP Metal Etcher Training	Flexible	SNF Paul G Allen L107 Cleanroom	Single wafer; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; Restrictions: Can not etch metals or metal oxides with no volatile by-products (shorting & arcing issues)

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