PECVD Equipment Summary
This is a summary of the Plasma Enhanced Chemical Vapor Deposition (PECVD) Equipment in the SNF labs.
PECVD Equipment Summary
| Purpose | Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Material Thickness Range | Notes | |
|---|---|---|---|---|---|---|---|---|---|
| EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD | AMAT Centurion Epitaxial System (epi2) | Clean | Pre-Diffusion Clean | 1 |
600 °C - 1200 °C
|
50.00 Å -
3.00 μm
|
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
||
| Plasma Enhanced (PE) CVD | PlasmaTherm Shuttlelock PECVD System (ccp-dep) | All | 4 |
100 °C - 350 °C
|
100.00 Å -
4.00 μm
|
To maintain cleanliness level, cleans of both the chamber and wafers are required prior to... |
|||
| Plasma Enhanced (PE) CVD | PlasmaTherm Versaline HDP CVD System (hdpcvd) | All | 1 |
50 °C - 150 °C
|
500.00 Å -
4.00 μm
|
To maintain cleanliness level there are cleans required for both the chamber and wafers prior to... |
Last modified: 30 Jan 2023
