LPCVD Equipment Summary
This is a summary of the Low Pressure Chemical Vapor Deposition (LPCVD) equipment.
LPCVD Equipment Summary
| Processing Technique | Cleanliness | Gases | Cleaning Required | Substrate Size | Maximum Load | Process Temperature Range | Material Thickness Range | Notes | |
|---|---|---|---|---|---|---|---|---|---|
| EPI (CVD), Low Pressure (LP) CVD, Hydrogen (H2) Annealing, Doping, Plasma Enhanced (PE) CVD | AMAT Centurion Epitaxial System (epi2) | Clean | Pre-Diffusion Clean | 1 |
600 °C - 1200 °C
|
50.00 Å -
3.00 μm
|
N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr |
||
| Low Pressure (LP) CVD | Tystar Bank 1 Tube 3 Poly (B1T3 Flexible Poly) | Flexible | 100 |
420 °C - 630 °C
|
25.00 Å -
2.00 μm
|
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| Low Pressure (LP) CVD | Tystar Bank 3 Tube 12 Poly (B3T12 Clean Poly) | Clean | Pre-Diffusion Clean | 50 |
420 °C - 630 °C
|
25.00 Å -
2.00 μm
|
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| Low Pressure (LP) CVD | Tystar Bank 3 Tube 10 Nitride (B3T10 Clean Nitride) | Clean | Pre-Diffusion Clean | 50 |
420 °C - 800 °C
|
25.00 Å -
2.00 μm
|
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| Low Pressure (LP) CVD | Tystar Bank 2 Tube 7 Nitride (B2T7 Clean Nitride) | Clean | Pre-Diffusion Clean | 50 |
420 °C - 800 °C
|
25.00 Å -
2.00 μm
|
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| Low Pressure (LP) CVD | Tystar Bank 1 Tube 4 LTO (B1T4 Flexible LTO) | Flexible | 100 |
300 °C - 500 °C
|
25.00 Å -
2.00 μm
|
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| Low Pressure (LP) CVD | Tystar Bank 3 Tube 11 TEOS (B3T11 Clean TEOS) | Clean | Pre-Diffusion Clean | 50 |
420 °C - 630 °C
|
25.00 Å -
2.00 μm
|
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| Low Pressure (LP) CVD | Tystar Bank 2 Tube 8 LTO (B2T8 Clean LTO) | Clean | 100 |
300 °C - 500 °C
|
25.00 Å -
2.00 μm
|
Last modified: 30 Jan 2023
