ALD Equipment Summary
This is a summary of the Atomic Layer Deposition (ALD) equipment.
ALD Equipment Summary
| Cleanliness | Gases | Substrate Size | Process Temperature Range | Notes | Material Thickness Range | |
|---|---|---|---|---|---|---|
| Fiji 1 ALD (fiji1) | Semiclean |
24 °C - 350 °C
|
1.00 Å -
50.00 nm
|
|||
| Fiji 2 ALD (fiji2) | Flexible |
24 °C - 350 °C
|
1.00 Å -
50.00 nm
|
|||
| Fiji 3 ALD (fiji3) | Flexible |
24 °C - 350 °C
|
Restricted to non-conductive films only |
1.00 Å -
50.00 nm
|
||
| MVD (mvd) | Flexible |
24 °C - 150 °C
|
Reactor located inside glovebox |
1.00 Å -
50.00 nm
|
||
| Savannah ALD (savannah) | Flexible |
24 °C - 250 °C
|
1.00 Å -
50.00 nm
|
Last modified: 30 Jan 2023
