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Stanford Nanofabrication Facility
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Ammonia
Chemical Formula:
NH
3
Gases Equipment Tabs
Etch Equipment Table
Equipment name or Badger ID
Partial words okay.
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Anneal/Oxidation Equipment Table
Equipment name or Badger ID
Partial words okay.
Deposition Equipment
Equipment name & Badger ID
Cleanliness
Location
Material Thickness Range
Approved Materials supplied by Lab
Aixtron MOCVD - III-N system
aix-ccs
Clean (MOCVD)
SNF MOCVD Paul G Allen 213XA
0.00
-
5.00 μm
AlGaN
AlN
GaN
III-N materials
InAlN
InGaAlN
InGaN
InN
Fiji 1 ALD
fiji1
Semiclean
SNF Cleanroom Paul G Allen L107
1.00 Å
-
50.00 nm
Metal oxides
Al
2
O
3
HfN
HfO
2
Pt
Ru
SiO
2
Ta
2
O
5
TaN
TiN
TiO
2
Various Dielectrics
ZrO
2
Fiji 3 ALD
fiji3
Flexible
SNF Cleanroom Paul G Allen L107
1.00 Å
-
50.00 nm
Al
2
O
3
HfO
2
SiO
2
TiO
2
Various Dielectrics
PlasmaTherm Shuttlelock PECVD System
ccp-dep
All
SNF Cleanroom Paul G Allen L107
100.00 Å
-
4.00 μm
Si
Si3N4
SiC
SiO
2
SiON
RTA AllWin 610
aw610_l
Clean
SNF Cleanroom Paul G Allen L107
RTA AllWin 610
aw610_r
Flexible
SNF Cleanroom Paul G Allen L107
Tystar Bank 2 Tube 7 Nitride
B2T7 Clean Nitride
Clean
SNF Cleanroom Paul G Allen L107
25.00 Å
-
2.00 μm
Si3N4
SiON
Tystar Bank 3 Tube 10 Nitride
B3T10 Clean Nitride
Clean
SNF Cleanroom Paul G Allen L107
25.00 Å
-
2.00 μm
Si3N4
SiON