Equipment name & NEMO ID | Technique | Cleanliness | Primary Materials Etched | Other Materials Etched | Material Thickness Range | Materials Lab Supplied | Developer | Process Temperature Range | Gases | Sample Size Limits | Substrate Size | Substrate Type | Maximum Load |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Matrix Plasma Resist Strip matrix |
Flexible |
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25 | ||||||||||
micromanipulator6000 IV-CV probe station micromanipulator6000 |
All |
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1x4" wafer | ||||||||||
Nanospec 210XP nanospec2 |
All |
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Oven (White) white-oven |
Flexible |
0 °C - 200 °C
|
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Oven 110°C post-bake oven110 |
All |
110 ºC
|
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||||||||||
Oven 90°C prebake oven90 |
All |
90 ºC
|
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Oven BlueM 200°C to 430°C bluem |
Flexible |
0 °C - 430 °C
|
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||||||||||
Oxford Dielectric Etcher oxford-rie |
Flexible |
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1 | ||||||||||
PDS 2010 LABCOTER™ 2 Parylene Deposition System parcoater |
Flexible |
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PlasmaTherm Shuttlelock PECVD System ccp-dep |
All |
100.00 Å -
4.00 μm
|
100 °C - 350 °C
|
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4 | ||||||||
Profilometer Alphastep 500 alphastep |
Flexible |
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1 | ||||||||||
Profilometer AlphaStep D-300 alphastep2 |
Flexible |
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1 | ||||||||||
Prometrix Resistivity Mapping System prometrix |
All |
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1 | ||||||||||
Samco PC300 Plasma Etch System samco |
Flexible |
20 ºC
|
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Four 4" wafers or two 6" wafers and one 8" wafer | |||||||||
Savannah ALD savannah |
Flexible |
1.00 Å -
50.00 nm
|
24 °C - 250 °C
|
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SEM -Zeiss Merlin sem-merlin |
All |
0.00 mm -
35.00 mm
|
6 in wafer |
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Sensofar S-neox s-neox |
All |
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1 | ||||||||||
SPTS uetch vapor etch uetch |
All |
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1 | ||||||||||
SVG Develop Track 1 svgdev |
All |
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25 4 inch wafers | ||||||||||
SVG Develop Track 2 svgdev2 |
All |
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25 4 inch wafers |