SU-8, LOL, Ebeam resists allowed. No Acetone allowed.
reactive O2/N2 sputtering, substrate bias, substrate heating, co-sputter
Typically used for sputter etching; Single wafer, direct load system; wafers/ pieces can be directly placed on electrode
Reactor located inside glovebox
Manual Film Thickness Measurement. Single or dual layer transparent films > 300 Ã
For LOL2000 bake or bakes which are not allowed in the other ovens and need higher temperatures, up to 200C, programmable.
Bakes wafers with resist after the development, called post-bake.
Bakes wafers after resist coating.
Convection in N2. Cure. Programmable.
Single wafer; Bosch process for Si etching; Default 4" config; Can be converted to 6" config; pieces need to be attached to carrier wafer; need a support wafer for through wafer etching, can be used for Isotropic Si Etching
