This is an archive of requests from 2013 to 2021. New requests are not being added here.
PROM Request Title PROM Date PROM Request Summary Equipment List PROM Decision
Ni foam use in Graphene Furnace 10/25/2016 (all day) Use of Ni foam as substrate in graphene furnace. Aixtron Black Magic graphene CVD furnace (aixtron-graphene) Approved.
Use of Surfactant 1ATC9 for eGaIn sonication 10/24/2016 (all day) Use of 1ATC9 for sonication of solution to make eGaIn ink to use in Dimatix nano-ink jet printer. Fujifilm Dimatix Ink Jet Printer (nanoinkjet),
QSonica Q700 Sonicator (sonicator)
Approved.
Use of surfactant 1-dodecanethiol for eGaIn Sonication 10/24/2016 (all day) Use of 1-dodecanethiol for sonication of solution to make eGaIn ink to use in Dimatix nano-ink jet printer. Fujifilm Dimatix Ink Jet Printer (nanoinkjet),
Probe Sonicator
Approved.
Solder Paste and Spheres for Finetech Bonding 10/12/2016 (all day) Use of Pb-containing paste and spheres for soldering using Finetech Flip Chip Bonder. Finetech Lambda (flipchipbonder) Approved. Use of portable HEPA filter required due to Pb-containing materials.
NeverWet Hydrophobic Coating for use in nSiL 10/05/2016 (all day) NeverWet Hydrophobic Coating to be used in nSiL lab. SOP generated. PDMS Spin Coater (spincoat-g3p8) Approved.
Spin coating of ladder polymer on silicon chips 09/13/2016 (all day) Polymer synthesized in Prof. Xia's group (Chemistry) to be spin coated in SNF. Approved for spin coater in CMP room.
Use of Cr(OH)3 in SNF 09/02/2016 (all day) Use of Cr(OH)3 slurry in Laurell-G. SVG Resist Coat Track 1 (svgcoat),
Karl Suss MA-6 Contact Aligner (karlsuss),
SVG Develop Track 1 (svgdev),
Laurell-G
Approved.
UHV Al sputtering for processing in SNF 08/19/2016 (all day) Documenting processing for clean Al deposition in post-Gryphon SNF tool era. Approved.
Evaluation of Fiji Plasma Damage 08/17/2016 (all day) Material request to evaluate Fiji plasma system for damage. Approved. Please contact PROM Committee (snf-promcommittee at lists dot stanford dot edu) for details.
ALD oxides in teos2 08/04/2016 (all day) High quality oxides from teos2 required for devices, so contamination mitigation plan proposed to allow ALD films from Fiji1 to process in clean teos2. Fiji 1 ALD (fiji1) Approved.

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